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首页> 外文期刊>Journal of power electronics >High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching
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High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching

机译：基于高频GaN HEMT的零电压开关负载点同步降压转换器

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摘要

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.
机译：氮化镓（GaN）功率开关器件具有开关速度快，导通电阻低和高温工作能力等优点，因此有望成为高开关频率和高效率功率转换的候选器件。为了更好地促进这些新器件的使用，需要优选地通过与各种传统的硅（Si）器件进行比较来详细研究器件的特性和性能。本文对基于GaN高电子迁移率晶体管（HEMT）的非隔离负载点（POL）同步降压转换器进行了全面研究，该转换器在2.7 MHz频率下具有高降压比（24 V至3.3 V）。分析了GaN HEMT和三种不同的Si器件的特性和性能，并讨论了GaN HEMT的最佳工作点。实施零电压开关（ZVS）可以最大程度地降低高开关频率操作中的开关损耗。原型电路和实验数据支持分析和仿真结果的有效性。

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