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首页> 外文期刊>Journal of power sources >Rare earth ions doped NiO_x hole transport layer for efficient and stable inverted perovskite solar cells
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Rare earth ions doped NiO_x hole transport layer for efficient and stable inverted perovskite solar cells

机译：稀土离子掺杂的NiO_x空穴传输层，用于高效，稳定的倒钙钛矿太阳能电池

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摘要

Hole transport layer plays a critical role in achieving high performance and stable inverted perovskite solar cells (PSCs). Doping has been proved to be an effective strategy to modify the electrical and optical properties of semiconductor oxides. Herein, rare earths (REs: Ce, Nd, Eu, Tb, and Yb) elements are systemically doped into the NiOx hole transport layer (HTL) via a simple solution-based method. The results demonstrate that the REs doping could considerably modify the compactness, conductivity, and band alignment of the NiOx HTL, leading to the highly improved permanence of the inverted PSCs. The PSCs using 3% Eu:NiOx HTL yielded the optimum power conversion efficiency of 15.06%, relatively improved 23.4% compared with the PSC using pristine NiOx HTL (12.20%). It also demonstrated much better long time stability. The improved photovoltaic properties of the device can be attributed to the more efficient charge extraction and suppressed interfacial recombination rate by the introduction of appropriate REs in the NiOx HTL. This work indicates that RE doping is a very effective and promising strategy to achieve adjustable hole extraction material for high and stable inverted PSCs.
机译：空穴传输层在实现高性能和稳定的倒钙钛矿太阳能电池（PSC）中起着关键作用。掺杂已被证明是改变半导体氧化物的电学和光学性质的有效策略。在此，通过简单的基于溶液的方法将稀土元素（稀土元素：Ce，Nd，Eu，Tb和Yb）系统地掺杂到NiOx空穴传输层（HTL）中。结果表明，稀土元素的掺杂可以显着改变NiOx HTL的致密性，导电性和能带排列，从而大大提高了反向PSC的持久性。使用3％Eu：NiOx HTL的PSC的最佳功率转换效率为15.06％，与使用原始NiOx HTL的PSC（12.20％）相比，改进了23.4％。它还显示出更好的长期稳定性。通过在NiOx HTL中引入合适的RE，可以提高器件的光电性能，这可归因于更有效的电荷提取和抑制的界面复合率。这项工作表明，稀土掺杂是获得高效稳定的反向PSC的可调空穴提取材料的一种非常有效且有希望的策略。

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