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首页> 外文期刊>Journal of power sources >Plasma sprayed metal supported YSZ/Ni-LSGM-LSCF ITSOFC with nanostructured anode
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Plasma sprayed metal supported YSZ/Ni-LSGM-LSCF ITSOFC with nanostructured anode

机译:等离子喷涂金属支撑的YSZ / Ni-LSGM-LSCF ITSOFC纳米结构阳极

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摘要

Intermediate temperature solid oxide fuel cells (ITSOFCs) supported by a porous Ni-substrate and based on Sr and Mg doped lanthanum gallate (LSGM) electrolyte, lanthanum strontium cobalt ferrite (LSCF) cathode and nanostructured yttria stabilized zirconia-nickel (YSZ/Ni) cermet anode have been fabricated successfully by atmospheric plasma spraying (APS). From ac impedance analysis, the sprayed YSZ/Ni cermet anode with a novel nanostructure and advantageous triple phase boundaries after hydrogen reduction has a low resistance. It shows a good electrocatalytic activity for hydrogen oxidation reactions. The sprayed LSGM electrolyte with ~60μm in thickness and ~0.054Scm~(-1) conductivity at 800 ℃ shows a good gas tightness and gives an open circuit voltage (OCV) larger than 1 V. The sprayed LSCF cathode with ~30 μm in thickness and ~30% porosity has a minimum resistance after being heated at 1000 ℃ for 2 h. This cathode keeps right phase structure and good porous network microstructure for conducting electrons and negative oxygen ions. The APS sprayed cell after being heated at 1000 ℃ for 2h has a minimum inherent resistance and achieves output power densities of ~440mW cm~(-2) at 800℃, ~275 mW cm~(-2) at 750℃ and ~170mW cm~(-2) at 700℃. Results from SEM, XRD, ac impedance analysis and I-V-P measurements are presented here.
机译:中温固体氧化物燃料电池(ITSOFC),由多孔镍基底支撑,基于Sr和Mg掺杂的没食子酸镧(LSGM)电解质,镧锶锶铁氧体(LSCF)阴极和纳米结构的氧化钇稳定的氧化锆镍(YSZ / Ni)金属陶瓷阳极已通过大气等离子喷涂(APS)成功制造。根据交流阻抗分析,喷涂的YSZ / Ni金属陶瓷阳极具有新颖的纳米结构和氢还原后有利的三相边界,具有低电阻。它对氢氧化反应显示出良好的电催化活性。喷涂的LSGM电解质厚度为〜60μm,在800℃时的电导率为〜0.054Scm〜(-1),具有良好的气密性,开路电压(OCV)大于1V。喷涂的LSCF阴极为〜30μm。在1000℃加热2小时后,厚度和约30%的孔隙率的电阻最小。该阴极保持用于电子和负氧离子导电的正相结构和良好的多孔网络微观结构。 APS喷涂电池在1000℃加热2h后具有最小的固有电阻,在800℃时达到〜440mW cm〜(-2),在750℃时达到〜275 mW cm〜(-2)和〜170mW的输出功率密度在700℃时,cm〜(-2)。此处提供了SEM,XRD,交流阻抗分析和I-V-P测量的结果。

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