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首页> 外文期刊>Journal of power sources >Electrical behaviour of glass-ceramics in the systems RO-BaO-SiO_2 (R = Mg, Zn) for sealing SOFCs
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Electrical behaviour of glass-ceramics in the systems RO-BaO-SiO_2 (R = Mg, Zn) for sealing SOFCs

机译：用于密封SOFC的RO-BaO-SiO_2（R = Mg，Zn）系统中玻璃陶瓷的电性能

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摘要

The electrical behaviour of glass-ceramics in the system, RO-BaO-SiO_2 (R = Mg, Zn), was characterised in the range from 500 to 850 deg C by electrochemical impedance spectroscopy (EIS) simulating the start-up thermal treatment programme of an SOFC. The thermal treatment covers the sintering and crystallisation temperature range of the glass-ceramics. Over the whole temperature range, samples presented an electrical resistance much higher than 10~4 OMEGA cm, thus behaving like insulators. Impedance spectra were expressed as Bode plots showing the impedance as a function of frequency and phase angle. Electrical properties corresponding to the bulk specimen were obtained by employing an equivalent circuit to simulate the impedance spectra. The influence of crystallisation on electrical properties has been followed by EIS showing the capability of this method as a thermal analysis technique. The specific conductivities were illustrated by Arrhenius plots and its derivative (- d log sigma/d(1/T)). Glass transition and crystallisation processes strongly affect the derivative, whose shape can provide information about both processes. Hot-stage microscopy (HSM) and differential thermal analysis (DTA) were carried out under the same thermal conditions. The results obtained by the different techniques were analysed in detail resulting in good agreement.
机译：通过模拟启动热处理程序的电化学阻抗谱（EIS），在500至850℃范围内表征了系统中的玻璃陶瓷RO-BaO-SiO_2（R = Mg，Zn）的电性能。 SOFC。热处理涵盖了玻璃陶瓷的烧结和结晶温度范围。在整个温度范围内，样品的电阻远高于OMEGA cm的10〜4 cm，因此表现得像绝缘子。阻抗谱以波特图表示，该图显示了阻抗与频率和相角的关系。通过使用等效电路来模拟阻抗谱，可以获得与大块试样相对应的电学特性。 EIS跟踪了结晶对电性能的影响，表明了该方法作为热分析技术的能力。通过Arrhenius图及其导数（-d log sigma / d（1 / T））来说明比电导率。玻璃化转变和结晶过程强烈影响衍生物，其形状可以提供有关这两个过程的信息。在相同的热条件下进行了热台显微镜（HSM）和差热分析（​​DTA）。对通过不同技术获得的结果进行了详细分析，取得了良好的一致性。

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