机译:纳米Fe3 sub> O4 sub>引起的MgB2 sub>超导体中的磁通跃迁和低场增强的临界电流密度
National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India;
National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India;
Superconducting Materials Center NIMS 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan;
Physics Department Jamia Millia Islamia University New Delhi 110025 India;
National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India;
Physics Department Jamia Millia Islamia University New Delhi 110025 India;
National Physical Laboratory Dr. K.S. Krishnan Marg New Delhi 110012 India;
Racah Institute of Physics Hebrew University of Jerusalem Jerusalem 91904 Israel;
Racah Institute of Physics Hebrew University of Jerusalem Jerusalem 91904 Israel;
MgB2; Vacuum synthesis; Nano-Fe3O4; Critical current density;
机译:MgB {sub} 2超导体中的纳米Fe {sub} 3O {sub} 4引起的磁通跃迁和低场增强的临界电流密度
机译:通过纳米TiC与纳米SiC共掺杂显着提高MgB_2超导体的场内临界电流密度
机译:通过组合添加烧过的稻壳和纳米Ho_2O_3,可大大提高MgB_2超导体的场内临界电流密度
机译:在Bi_(2)SR_(2)CACU_(2)O_(y)超导晶须的低磁场下的临界电流密度在70 k约为70 k下的临界电流密度
机译:了解为什么谷物边界限制了Fe基超导体的临界电流密度,并探讨了提高电流密度的方法
机译:FeO包覆的MgB2薄膜在高磁场下的临界电流密度的提高
机译:提高合成mgB2超导体的临界电流密度 高磁场