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首页> 外文期刊>Journal of the American Chemical Society >MOCVD-derived highly transparent, conductive zinc- and tin-doped indium oxide thin films: Precursor synthesis, metastable phase film growth and characterization, and application as anodes in polymer light-emitting diodes
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MOCVD-derived highly transparent, conductive zinc- and tin-doped indium oxide thin films: Precursor synthesis, metastable phase film growth and characterization, and application as anodes in polymer light-emitting diodes

机译：MOCVD衍生的高透明，导电的锌和锡掺杂的氧化铟薄膜：前驱体合成，亚稳相膜的生长和表征，以及在聚合物发光二极管中用作阳极

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Four diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)(2)center dot(diamine)] can be synthesized in a single-step reaction. Single crystal X-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these new complexes are considerably greater than those of conventional solid zinc metal-organic chemical vapor deposition (MOCVD) precursors. One of the complexes in the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)-(N,N-diethylethylenediamine)zinc, is particularly effective in the growth of thin films of the transparent conducting oxide Zn-In-Sn-O (ZITO) because of its superior volatility and low melting point of 64 degrees C. ZITO thin films with In contents ranging from 40 to 70 cation % (a metastable phase) were grown by lowpressure MOCVD. These films exhibit conductivity as high as 2900 S/cm and optical transparency comparable to or greater than that of commercial Sn-doped indium oxide (ITO) films. ZITO films with the nominal composition of Znln(2.0)Sn(1.5)O(z) were used in fabrication of polymer light-emitting diodes. These devices exhibit light outputs and current efficiencies almost 70% greater than those of ITO-based control devices.
机译：可以在一步反应中合成双（六氟乙酰丙酮）锌[Zn（hfa）（2）中心点（二胺）]的四个二胺加合物。单晶X射线衍射研究表明单体六坐标结构。这些新的配合物的热稳定性和气相传输性能大大高于常规的固态锌金属-有机化学气相沉积（MOCVD）前体。双（1,1,1,5,5,5-六氟-2,4-戊二酮）-（N，N-二乙基乙二胺）锌系列的配合物中的一种特别有效地生长了透明导电氧化物Zn-In-Sn-O（ZITO）由于其优异的挥发性和64摄氏度的低熔点而闻名。通过低压生长In含量为40-70阳离子％（亚稳相）的ZITO薄膜MOCVD。这些薄膜具有高达2900 S / cm的电导率，并且光学透明性可与市售Sn掺杂的氧化铟（ITO）薄膜相比或更高。标称组成为Znln（2.0）Sn（1.5）O（z）的ZITO膜用于制造聚合物发光二极管。这些设备的光输出和电流效率比基于ITO的控制设备高出近70％。

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