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首页> 外文期刊>Key Engineering Materials >Ferroelectric Properties of Epitaxial BiFe_(0.97)Mn_(0.03)O_3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates
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Ferroelectric Properties of Epitaxial BiFe_(0.97)Mn_(0.03)O_3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

机译：硅衬底上沉积不同晶体取向的BiFe_（0.97）Mn_（0.03）O_3薄膜的铁电性能

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摘要

We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe_(0.97)Mn_(0.03)O_3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO_2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO_2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}＞{110}＞{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm~2 at 100 kHz, 25℃.
机译：我们研究了外延锰掺杂铋铁氧体BiFe_（0.97）Mn_（0.03）O_3（BFMO）薄膜的电学性质，该薄膜具有不同的晶体取向，并沉积在具有适当缓冲层的Si衬底上。通过（001），（101）和（111）取向的外延SrRuO3（SRO）薄膜分别通过CeO_2 /氧化钇稳定的氧化锆（YSZ）/ Si（001）衬底和YSZ / Si（001）衬底生长利用脉冲激光沉积（PLD）插入MgO和TiO_2原子层。使用旋涂，我们将BFMO薄膜沉积到定向SRO薄膜上。 BFMO方向遵循SRO方向。 BFMO的Pr值按以下顺序排列{111}＞ {110}＞ {100}，这与通过晶体学考虑所预测的值相同。 {111}取向的最大Pr值在25°C和100 kHz下为76μC/ cm〜2。

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  • 来源
    《Key Engineering Materials》 |2010年第2010期|111-114|共4页
  • 作者

    Hyun-young Go; Naoki Wakiya; Takanori Kiguchi; Tomohiko Yoshioka; Osamu Sakurai; Jeffrey S. Cross; Junzo Tanaka; Kazuo Shinozaki;

  • 作者单位

    Dept. Metallurgy & Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S7-6 Ookayama, Meguro-ku, Tokyo 152-8550, Japan;

    Department of Materials Science & Chemical Engineering, Shizuoka Univ., 3-5-1 Johoku Naka-ku, Hamamatsu 432-8561, Japan;

    Institute for Materials Research, Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Dept. Metallurgy & Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S7-6 Ookayama, Meguro-ku, Tokyo 152-8550, Japan;

    Dept. Metallurgy & Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S7-6 Ookayama, Meguro-ku, Tokyo 152-8550, Japan;

    Dept. Metallurgy & Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S7-6 Ookayama, Meguro-ku, Tokyo 152-8550, Japan;

    Dept. Metallurgy & Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S7-6 Ookayama, Meguro-ku, Tokyo 152-8550, Japan;

    Dept. Metallurgy & Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S7-6 Ookayama, Meguro-ku, Tokyo 152-8550, Japan;

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  • 正文语种 eng
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  • 关键词

    BiFeO_3; thin film; epitaxial; crystal orientation; PLD;

    机译：BiFeO_3;薄膜;外延晶体取向可编程逻辑器件;

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