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Domain Switching and Crack Tip Opening Stress Variation in Ferroelectric Ceramics

机译：铁电陶瓷的晶畴转换和裂纹尖端开放应力变化

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摘要

Evolution of switching zone near a crack tip in ferroelectric ceramics is calculated using the constitutive equations proposed in [1], with an assumption that switching-induced internal fields are minimized by fine domain microstructures and moving charges. A two-dimensional ferroelectric ceramic specimen that has an edge crack and that is poled perpendicular to the crack plane are subjected to external stress and electric fields. Diverse crack tip microstructures are obtained depending on both the history and the ratio of electric and stress loads. It is shown that opposite crack tip opening stresses under the same electric fields are due to opposite distributions of piezoelectric coefficients in the specimens with different crack tip microstructures.
机译：使用[1]中提出的本构方程计算铁电陶瓷裂纹尖端附近开关区域的演变，并假设通过微区微结构和移动电荷将开关引起的内部场最小化。具有边缘裂纹且垂直于裂纹平面极化的二维铁电陶瓷样品会受到外部应力和电场的影响。取决于历史以及电和应力负载的比率，可以获得各种裂纹尖端的微观结构。结果表明，在相同电场下，裂纹尖端的张应力相反，是由于裂纹尖端微观结构不同的试样中压电系数的分布相反。

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