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首页> 外文期刊>Key Engineering Materials >Improvement of Piezoelectric Properties Through Post Hipping
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Improvement of Piezoelectric Properties Through Post Hipping

机译：通过后髋关节改善压电性能

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Lead-zirconate-titanate materials added with donor dopants either in the A and B site were obtained by conventional solid state reaction of the starting oxides followed by hot isostatic pressing for two hours at 950℃ and 100 MPa after sintering. The post HIPping temperature was 300℃ under the sintering temperature so as to sligthly influence the morphology of grains, while the residual porosity was completely removed. The elastic, dielectric, and piezoelectric characteristics of post-hipped samples were enhanced in comparison to the as sintered samples (e.g. d_(33) and k_p increase about 5 and 8%, respectively) in agreement with the improved microstructure.
机译：通过常规的起始氧化物固态反应，然后在烧结后在950℃和100 MPa下热等静压2小时，可在A和B部位添加施主掺杂剂的锆钛酸铅材料。在烧结温度下，HIPping后温度为300℃，以适当影响晶粒的形貌，而残余的孔隙率被完全去除。与烧结后的样品相比（例如d_（33）和k_p分别增加了约5％和8％），与改善后的微观结构相比，后结合后样品的弹性，介电和压电特性得到了增强。

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