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Study on the Effects of Substrate Grain Size on Diamond Thin Films Deposited on Tungsten Carbide Substrates

机译:衬底粒径对碳化钨衬底上沉积金刚石薄膜影响的研究

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摘要

Three sets of Co-cemented tungsten carbide (94 wt. % WC-6wt. % Co) blades with different average grain size (0.5,1.5 and 3 μm) were used as substrates. After usual acid etching and scratching with diamond powders, H_2 gas etching decarburization by microwave plasma and cleaning in an ultrasonic bath of acetone solution, substrates with different WC grain size were placed in the electron aided hot filament chemical vapor deposition (EACVD) reactor to fabricate diamond thin films. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, indention tests and surface scanning profilometer showed that substrate grain size plays an important role in determining the performance of diamond films deposited on the tungsten carbide substrates such as film adhesive strength, film surface roughness and diamond film quality. The related conclusions were beneficial to the optimization of CVD diamond process and also to the metallurgical process of tungsten carbide.
机译:使用三组具有不同平均晶粒尺寸(0.5、1.5和3μm)的共固结碳化钨(94 wt。%WC-6wt。%Co)叶片作为基材。经过通常的酸蚀刻和金刚石粉末刮擦,H_2气体蚀刻,微波等离子体脱碳以及在丙酮溶液的超声浴中清洗后,将具有不同WC粒度的基板放入电子辅助热丝化学气相沉积(EACVD)反应器中进行制造金刚石薄膜。扫描电子显微镜(SEM),X射线衍射(XRD),拉曼光谱,压痕测试和表面扫描轮廓仪表明,基底晶粒尺寸在决定沉积在碳化钨基底(例如薄膜胶粘剂)上的金刚石薄膜的性能方面起着重要作用强度,膜表面粗糙度和金刚石膜质量。相关结论有利于CVD金刚石工艺的优化,也有利于碳化钨的冶金工艺。

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