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Effect of Coarser Grains on Sintering of AlN

机译:粗粒对AlN烧结的影响

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Aluminum nitride (AlN) is an attractive material for electronic devices because it has high thermal conductivity (320W/mK), good electrical insulation, and thermal expansion coefficient close to silicon. We have reported that liquid phase sintering behavior of the AlN ceramics was corresponded with lattice constant c and wettability, namely dihedral angle between AlN and liquid phase. Furthermore, in our previous study, it was clarified that densification of the AlN sintered body with coarser grains was limited in comparison to that without them. In this study, we investigated densification behavior of AlN powder with coarser grains forecasted on the change in lattice constant c and dihedral angle between liquid and solid interface during sintering. Green bodies from powder mixture of AlN with 5.0wt%Y_2O_3 addition were fired at the temperature range of 1650 to 1850℃ in 0.6MPa N_2. The lattice constant c of AlN grains, the relative density, the dihedral angle between AlN and liquid phase of the sintered body were evaluated. As a result, densification of the AlN sintered body with coarser grains was delayed in comparison to that without them. Change of the dihedral angle between AlN and liquid phase is late in comparison to that without them. Change of the dihedral angle, oxygen content in AlN grain is restricted until high temperature. Therefore, it seems when coarser grains are added, movement of oxygen from AlN grain is interrupted.
机译:氮化铝(AlN)具有很高的热导率(320W / mK),良好的电绝缘性和接近硅的热膨胀系数,因此对电子设备来说是有吸引力的材料。我们已经报道,AlN陶瓷的液相烧结行为与晶格常数c和润湿性相对应,即AlN和液相之间的二面角。此外,在我们先前的研究中,已经澄清了与不具有粗大晶粒的AlN烧结体相比,其致密化受到限制。在这项研究中,我们调查了烧结过程中晶格常数c和液相与固相界面之间的二面角变化预测的具有较粗晶粒的AlN粉末的致密化行为。将添加了5.0wt%Y_2O_3的AlN粉末混合物的生坯在0.6MPa N_2下于1650至1850℃的温度范围内烧制。评价了AlN晶粒的晶格常数c,相对密度,AlN与烧结体的液相之间的二面角。结果,与不具有粗大晶粒的AlN烧结体相比,延迟了其致密化。 AlN和液相之间的二面角的变化比没有它们的情况晚。二面角的变化,AlN晶粒中的氧含量被限制直到高温。因此,似乎当添加较粗的晶粒时,氧气从AlN晶粒的运动被中断。

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