• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Key Engineering Materials >Grain Boundary Chemistry and Creep Resistance of Oxide Ceramics
【24h】

Grain Boundary Chemistry and Creep Resistance of Oxide Ceramics

机译：氧化物陶瓷的晶界化学和抗蠕变性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Oversized dopant ions such as yttrium, lanthanum, and neodymium segregate to grain boundaries and reduce the tensile creep rate of alpha-A12O3 by 2 or more orders of magnitude. One explanation for this behavior is that the oversized dopant segregants give rise to a `site-blocking' effect for grain boundacy diffusion. Another mechanism that has been speculated involves the change in grain boundary structure caused by dopant ion segregation, producing more abundant special houndaries. In addition, further reduction of creep rate can be obtained by selective co-doping. In this case, grain boundary diffusion is suppressed to such a degree that creep may now be controlled by lattice diffusion. The details of this behavior can be understood by careful tailoring of the alumina Strain boundacy chemistry as well as characterizing ihe grain boundary structure. This paper includes the results from analytical techniques such as SIMS, STEM, EBKD analyses along with computer modeling of segregation behavior
机译：钇，镧和钕等过大的掺杂离子会偏析到晶界，并使α-Al2O3的拉伸蠕变速率降低2个或更多个数量级。对此行为的一种解释是，过大的掺杂剂分离剂会引起晶粒边界扩散的“位阻”效应。推测的另一种机理涉及由掺杂剂离子的偏析引起的晶界结构的变化，从而产生更丰富的特殊边界。另外，可以通过选择性共掺杂进一步降低蠕变速率。在这种情况下，晶界扩散被抑制到可以通过晶格扩散控制蠕变的程度。通过仔细定制氧化铝应变边界化学以及表征晶界结构，可以了解这种行为的细节。本文包括SIMS，STEM，EBKD等分析技术的结果以及偏析行为的计算机建模

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号