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Fabrication and Characterization of 3D CISiC Composites via Slurry and PCVI Joint Process

机译:通过浆料和PCVI联合工艺制造和表征3D CISiC复合材料

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The effect of the pressure - pulsed chemical vapour infiltration on improving the quality of CMC - parts has besn investigated. In a fabrication process of three - dimensional C/SiC composites, the PCVI was applied as a final densification step for specimens made by a joint process consisting of slurry infiltration and polycarbosilane imprcgnation / pyrolysis. PCVl was carried out in the temperature range of 1323-1423 K using a source gas system of SiC14 - CH4 - H2. The crystalline phases deposited by PCVI varied with temperature, gas concentration and holding time. At 1373 K, a large amount of SiC deposition into the matrix was observed, and the deposition rate was at least twice higher than for the CH3SiCl3 H2 gas system in our previous work. The flexural strength remarkably increased after the PCVI step
机译:已经研究了压力脉冲化学气相渗透对改善CMC零件质量的影响。在三维C / SiC复合材料的制造过程中,将PCVI用作最终的致密化步骤,用于通过包括浆料浸渗和聚碳硅烷浸渍/热解的联合工艺制成的样品。使用SiC 14 -CH 4 -H 2的原料气系统在1323-1423K的温度范围内进行PCV1。 PCVI沉积的结晶相随温度,气体浓度和保持时间而变化。在1373 K下,观察到大量SiC沉积到基体中,并且沉积速率至少比我们先前工作中的CH3SiCl3 H2气体系统高出两倍。 PCVI步骤后,抗弯强度显着提高

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