The effect of variations in sintering temperature on the structure of electrically active interfacs in zinc oxide varistors

Z.Ling; J.D.Russell; C.Leach

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The effect of variations in sintering temperature on the structure of electrically active interfacs in zinc oxide varistors

机译：烧结温度变化对氧化锌压敏电阻电活性界面结构的影响

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The non linear electrical properties of zinc oxide based varistors are controlled by processes occurring at grain boundaries. In this study a series of zinc oxide based materials containing 0.5mol/100 Bi_2O_3 and 0.5mol/100 MnO were prepared using a range of sintering temperatures between 950 deg.C and 1300 deg.C and the electrical effects of built in fields and resistive barriers in the materials' microstructures were analysed using remote electron beam induced current (REBIC) imaging.

机译：氧化锌基压敏电阻的非线性电特性由晶界处发生的过程控制。在这项研究中，使用一系列在950℃至1300℃之间的烧结温度以及内置电场和电阻性电效应，制备了一系列包含0.5mol / 100 Bi_2O_3和0.5mol / 100 MnO的氧化锌基材料。使用远程电子束感应电流（REBIC）成像分析了材料微结构中的势垒。

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《Key Engineering Materials》 |1997年第2期|p.1305-1308|共4页
作者
Z.Ling; J.D.Russell; C.Leach;
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正文语种 eng
中图分类工程基础科学;
关键词
Zinc Oxide Varistors; REBIC; electrically active interfaces; grain boundary types;

机译：氧化锌压敏电阻;REBIC;电有源接口;晶界类型;

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1. Effect of Sintering Temperature on the Microstructure and Electrical Characteristics of Low Clamping Voltage Zinc Oxide- Based Ceramic Varistor [J] . J. O. Akinnifesi, O. O. Akinwunmi Journal of materials science research . 2015,第3期

机译：烧结温度对低钳位氧化锌基陶瓷压敏电阻组织和电性能的影响
2. Effect of Sintering Temperature on the Microstructure and Electrical Characteristics of Low Clamping Voltage Zinc Oxide- Based Ceramic Varistor [J] . J. O. Akinnifesi, O. O. Akinwunmi Journal of Materials Science Research . 2015,第3期

机译：烧结温度对低钳位氧化锌基陶瓷压敏电阻组织和电性能的影响
3. Effect of Sintering Temperature on the Microstructure and Electrical Characteristics of Low Clamping Voltage Zinc Oxide- Based Ceramic Varistor [J] . J. O. Akinnifesi, O. O. Akinwunmi Journal of Materials Science Research . 2015,第3期

机译：烧结温度对低钳位氧化锌基陶瓷压敏电阻组织和电性能的影响
4. The Effect of Variations in SIntering Temperature on the Structure of Electrically Active Interfaces in Zinc Oxide Varistors [C] . Z. Ling, J.D. Russell, C. Leach . 1997

机译：烧结温度变化对氧化锌压敏电阻电活性界面结构的影响
5. THE INFLUENCE OF GRAIN BOUNDARIES IN METAL OXIDE VARISTORS ON THEIR AC ELECTRICAL BEHAVIOR (ZINC OXIDE, MOVS). [D] . ALIM, MOHAMMAD ANWARUL. 1986

机译：金属氧化物压敏电阻中晶粒边界对它们交流电行为（氧化锌，MOVS）的影响。
6. High-performance varistors simply by hot-dipping zinc oxide thin films in Pr6O11: Influence of temperature [O] . Yang Wang, Zhijian Peng, Qi Wang, -1

机译：只需在Pr6O11中热浸氧化锌薄膜即可获得高性能压敏电阻：温度的影响
7. Influence of Sintering Temperature and ZrO2 Dopants on the Microstructure and Electrical Properties of Zinc Oxide Varistors [O] . Pengkang Xie, Jianping Hu 2019

机译：烧结温度和ZrO2掺杂剂对氧化锌变阻器微观结构和电性能的影响

The effect of variations in sintering temperature on the structure of electrically active interfacs in zinc oxide varistors

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