Device simulation of thin film diamonod MESFET

Kohei Suzuki; Dr. Alimitsu Nakaue

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Device simulation of thin film diamonod MESFET

机译：薄膜金刚石MESFET的器件仿真

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A two-dimensional device simulation technique ha been applied to the thin film diamond metal-semiconductor field effect transistor (MESFET) for the first time. Although the material-dependent parameters in the Simulator, such as hole mobility, are not fully optimized For the diamond device, the simulation results showed Reasonable agreement with the experiment. It was found From the results that improved channel cut-off Characteristics can be obtained with a reduced diamond Film thickness. The fundamental theory of MESFET and Device simulation were also reviewed.

机译：二维器件仿真技术已首次应用于薄膜金刚石金属半导体场效应晶体管（MESFET）。尽管并未完全优化模拟器中与材料相关的参数，例如空穴迁移率，但对于金刚石设备，仿真结果与实验结果显示出合理的一致性。从结果发现，可以通过减小金刚石膜厚度来获得改善的沟道截止特性。还回顾了MESFET的基本理论和器件仿真。

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《Kobelco Technology Review》 |1997年第19期|p.1-4|共4页
作者
Kohei Suzuki; Dr. Alimitsu Nakaue;
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正文语种 eng
中图分类冶金工业;
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Device simulation of thin film diamonod MESFET

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