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首页> 外文期刊>Laser & photonics reviews >Ultrahigh-Q Photonic Nanocavity Devices on a Dual Thickness SOI Substrate Operating at Both 1.31- and 1.55-μm Telecommunication Wavelength Bands
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Ultrahigh-Q Photonic Nanocavity Devices on a Dual Thickness SOI Substrate Operating at Both 1.31- and 1.55-μm Telecommunication Wavelength Bands

机译：双厚度SOI基板上的超高Q光子纳米腔器件，可在1.31和1.55μm的电信波长波段上工作

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摘要

A feasible method for integrating several silicon (Si) photonic devices with operating wavelengths separated by several hundred nanometers on a single chip will greatly help increasing capacities of small optical communication modules. This work demonstrates the integration of two photonic crystal nanocavity devices that exhibit ultrahigh quality factors (Q) and operate at the 1.31- and 1.55-mu m bands. A dual thickness Si-on-insulator substrate forms the base of the device. The two nanocavity patterns are defined by electron beam lithography on the thick and thin substrate regions and are transferred to the top Si layer by performing plasma etching only once. All dimensions of the fabricated 1.31-mu m nanocavity are approximate to 15.5% smaller (1-1.31/1.55) than those of the 1.55-mu m nanocavity; that is, they can be treated with the same photonic band diagram. Both nanocavities exhibit an ultrahigh Q 2.0 x 10(6) and enable fabrication of nanocavity-based Raman lasers for the 1.31/1.55-mu m bands with sub-microwatt threshold.
机译：在单个芯片上集成几个工作波长相隔数百纳米的硅（Si）光子器件的可行方法将极大地帮助提高小型光通信模块的容量。这项工作演示了两个具有超高品质因数（Q）并在1.31和1.55μm波段工作的光子晶体纳米腔器件的集成。双重厚度的绝缘体上硅衬底形成器件的基础。通过电子束光刻在厚的和薄的衬底区域上限定两个纳米腔图案，并且通过仅执行一次等离子体蚀刻将其转移到顶部Si层。所制造的1.31微米纳米腔的所有尺寸都比1.55微米纳米腔的尺寸小大约15.5％（1-1.31 / 1.55）；也就是说，可以用相同的光子能带图来对待它们。两种纳米腔均表现出Q> 2.0 x 10（6）的超高特性，并能够制造基于亚腔阈值的1.31 / 1.55μm波段的基于纳米腔的拉曼激光器。

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