Epitaxial growth and interface strain coupling effects in manganite film/piezoelectric-crystal multiferroic heterostructures

著录项

• 来源
  《Materials Chemistry and Physics》 |2012年第1期|42-46|共5页
• 作者

  R.K.Zheng; Y. Wang; Y.K. Liu; G.Y. Gao; L.F. Fei; Y.Jiang; H.L.W. Chan; X.M. Li; H.S. Luo; X.G. Li;

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• 作者单位

  State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China,Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, China;

  Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, China;

  Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China;

  Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, China;

  Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, China;

  Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, China;

  Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, China;

  State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

  State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

  Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A. Thin film; B. Epitaxial growth; C. Electronic characterisation; D. Transport properties;

  机译：A.薄膜;B.外延生长;C.电子表征;D.运输性质;