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I(v) Computational Conduction Model For A Sic-6h Schottky Diode

机译：Sic-6h肖特基二极管的I（v）计算电导模型

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摘要

A computational model has been developed in order to explain the anomalies observed in the direct SiC-6H I(V) characteristic diode. These irregularities consist in a thermionic, a generation-recombination, a tunnelling and a leakage electric current contributions. Two kinds of diode's dimensions have been used. For the small one, a good fitting, at all temperatures has been obtained, but for the big one, the fitting was relatively bad, perhaps due to a so important parasite resistance versus potential variation. Even, a high parasite resistance has been encountered near room temperature. From the Richardson plot, it has been extracted a value of the Richardson constant A~* very smaller than the theoretical value. A value of the barrier height has also been evaluated.
机译：为了解释在直接SiC-6H I（V）特性二极管中观察到的异常，已经开发了计算模型。这些不规则性包括热电子，产生复合，隧穿和漏电流贡献。已经使用了两种二极管的尺寸。对于小型传感器，在所有温度下均能获得良好的拟合，但是对于大型传感器，拟合度相对较差，这可能是由于如此重要​​的寄生虫抗性与电位变化之间的关系。甚至在室温附近也遇到了很高的寄生虫抗性。从理查森曲线中，已提取出理查森常数A〜*的值，该值非常小于理论值。屏障高度的值也已被评估。

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