Microstructure Related Transport Phenomena In Chemically Deposited Pbse Films

M. Shandalov; Z. Dashevsky; Y. Golan

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Microstructure Related Transport Phenomena In Chemically Deposited Pbse Films

机译：化学沉积铅薄膜中与微结构相关的传输现象

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We report on the electrical properties of chemically deposited PbSe films with controlled microstructure ranging from nanocrystalline to single crystal films. Control over the deposition mechanism consequently allowed control over the physical properties of the obtained films. The electrical conductivity, carrier concentration, drift mobility and carrier scattering mechanism were correlated with the film morphology. In polycrystalline PbSe films, the activation energy of the electrical conductivity is governed by the nature of the grain boundaries. In monocrystalline PbSe films, conductivity vs. temperature depends on carrier scattering from lattice vibrations.

机译：我们报告了化学沉积的PbSe薄膜的电学性质，该薄膜具有从纳米晶到单晶薄膜的受控微结构。因此，通过控制沉积机理，可以控制所获得的膜的物理性质。电导率，载流子浓度，漂移迁移率和载流子散射机理与薄膜的形态有关。在多晶PbSe薄膜中，电导率的活化能受晶界性质的控制。在单晶PbSe薄膜中，电导率与温度的关系取决于晶格振动引起的载流子散射。

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来源
《Materials Chemistry and Physics》 |2008年第1期|p.132-135|共4页
作者
M. Shandalov; Z. Dashevsky; Y. Golan;
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作者单位

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;工程基础科学;
关键词
semiconductors; chemical deposition; electrical characterization; electrical properties; lead selenide;

机译：半导体;化学沉积;电特性;电性能;硒化铅;

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专利

1. Microstructure and morphology evolution in chemical solution deposited semiconductor films: 3. PbSe on GaAs vs. Si substrate [J] . Shandalov M, Golan Y The European physical journal. Applied physics . 2005,第1期

机译：化学溶液沉积的半导体膜的微观结构和形貌演变：3. GaAs与Si衬底上的PbSe
2. Microstructure and morphology evolution in chemical solution deposited semiconductor films: 2. PbSe on As face of GaAs(111) [J] . Shandalov M, Golan Y The European physical journal. Applied physics . 2004,第1期

机译：化学溶液沉积半导体膜的微观结构和形貌演变：2. GaAs（111）As面上的PbSe
3. Microstructure and morphology evolution in chemical solution deposited PbSe films on GaAs(100) [J] . M. Shandalov, Y. Golan The European physical journal. Applied physics . 2003,第1期

机译：GaAs（100）上化学溶液沉积的PbSe薄膜的微观结构和形貌演变
4. Quantum Size Effects And Transport Phenomena In PbSe Quantum Wells And PbSe/EuS Superlattices [C] . E.I. Rogacheva, O.N. Nashchekina, S.I. Olkhovskaya, ICPS 2012 . 2013

机译：PBSE量子井和PBSE / EUS超晶格中的量子尺寸效应和运输现象
5. Microstructure-Dependent Electrochemical Properties of Chemical-Vapor Deposited POLY(3,4-Ethylenedioxythiophene) (Pedot) Films [D] . Arnold, Sean. 2019

机译：化学气相沉积的POLY（3,4-Ethylenedioxythiophene）（Pedot）薄膜的微观结构相关电化学性能
6. Numerical Study on the Dependency of Microstructure Morphologies of Pulsed Laser Deposited TiN Thin Films and the Strain Heterogeneities during Mechanical Testing [O] . Konrad Perzynski, Grzegorz Cios, Grzegorz Szwachta, 2021

机译：脉冲激光沉积锡薄膜微观结构形态依赖性的数值研究和机械测试中应变异质的数量研究
7. Microstructure-dependent electrochemical properties of chemical-vapor deposited poly(3,4-ethylenedioxythiophene) (PEDOT) films [O] . Sean P. Arnold, Jonathan K. Harris, Bharati Neelamraju, 2019

机译：化学 - 蒸气沉积聚（3,4-乙二氧基噻吩）（PEDOT）薄膜的微观结构依赖性电化学性能

Microstructure Related Transport Phenomena In Chemically Deposited Pbse Films

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