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首页> 外文期刊>Materials Chemistry and Physics >The electronic and optoelectronic properties study of N,N-dimethylperylene-3,4,9,10-dicarboximide/ITO film using surface photovoltage technique
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The electronic and optoelectronic properties study of N,N-dimethylperylene-3,4,9,10-dicarboximide/ITO film using surface photovoltage technique

机译：N，N-二甲基per-3,4,9,10-二甲酰亚胺/ ITO薄膜的表面光电压技术的电子和光电性能研究

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摘要

The electronic structure and photo-induced charge carriers transport have been studied in N,N-dimethylperylene-3,4,9,10-dicarboxirnide (Me-PTCDI) films evaporated on ITO substrate using surface photovoltage (SPV) technique. For the Me-PTCDI film with the thickness of 456 nm, with changing the illumination geometry, the amplitudes as well as the phases of the SPV response bands at the wavelength where Me-PTCDI strongly absorbs significantly changed, while those of the SPV response bands at the wavelength where Me-PTCDI weakly absorbs hardly changed. It was explained based on the different absorption lengths of Me-PTCDI at different wavelengths. The experiment results suggest that the photo-induced charge carriers generated at the surface and the interface region are separated by the action of the built-in electric field and move in the opposite directions. From the dependence of the work function on the film thickness, it is inferred that the interface and surface are all depleted with the interface space charge region extending to be about 200 nm. In addition, it is found that an acceptor state at 0.1 eV above the valence band exists at the surface as well as at the interface.
机译：利用表面光电压（SPV）技术，在ITO衬底上蒸镀的N，N-二甲基per-3,4,9,10-二羧酸（Me-PTCDI）薄膜中研究了电子结构和光诱导的载流子传输。对于厚度为456 nm的Me-PTCDI膜，随着照明几何形状的变化，在Me-PTCDI强烈吸收的波长处，SPV响应带的幅度和相位发生了显着变化，而SPV响应带的幅度和相位发生了显着变化。 Me-PTCDI弱吸收的波长几乎不变。基于Me-PTCDI在不同波长下的不同吸收长度进行了解释。实验结果表明，在表面和界面区域产生的光生电荷载流子通过内置电场的作用被分离并沿相反方向移动。从功函数对膜厚度的依赖性，可以推断出界面和表面都被耗尽，界面空间电荷区域扩展到约200nm。另外，发现在价带上方0.1eV处的受体状态存在于表面以及界面处。

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