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首页> 外文期刊>Materials Chemistry and Physics >Silver cofirable Bi_(1.5)Zn_(0.92)Nb_(1.5)O_(6.92) microwave ceramics containing CuO-based dopants
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Silver cofirable Bi_(1.5)Zn_(0.92)Nb_(1.5)O_(6.92) microwave ceramics containing CuO-based dopants

机译：含CuO基掺杂剂的可银Bi_（1.5）Zn_（0.92）Nb_（1.5）O_（6.92）微波陶瓷

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摘要

Bi_2O_3-ZnO-Nb_2O_5 system has emerged as a good low sintering (～ 1050℃) microwave material because it exhibits high dielectric constant and low temperature coefficient of resonance frequency (τ_f). We have lowered the sintering temperature of Bi_(1.5)Zn_(0.92)Nb_(1.5)O_(6.92) (BZN) below 900℃ by using 3 wt.% of CuO-based dopants, such as 0.21BaCO_3-0.79CuO (BC) and 0.81MoO_3-0.19CuO (MC). The doped BZN exhibits high microwave dielectric constant at 2.3 GHz (k ～ 120). The interfacial behavior between BZN and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. The extent of silver migration of MC and BC dopants is reduced at least by one order of magnitude as compared with V_2O_5 dopant when the samples was prepared at 900℃ for 4 h. Thus, CuO-based dopants can replace V_2O_5 to lower the sintering temperature of BZN and to be cofired with silver.
机译：Bi_2O_3-ZnO-Nb_2O_5体系由于具有较高的介电常数和较低的共振频率温度系数（τ_f）而成为一种良好的低烧结（〜1050℃）微波材料。通过使用3 wt。％的CuO基掺杂剂（例如0.21BaCO_3-0.79CuO（BC），将Bi_（1.5）Zn_（0.92）Nb_（1.5）O_（6.92）（BZN）的烧结温度降低到900℃以下）和0.81MoO_3-0.19CuO（MC）。掺杂的BZN在2.3 GHz（k〜120）处具有很高的微波介电常数。用X射线衍射仪，扫描电子显微镜和电子探针显微分析仪研究了BZN与银之间的界面行为。在900℃下制备4h时，与V_2O_5掺杂剂相比，MC和BC掺杂剂的银迁移程度至少降低了一个数量级。因此，基于CuO的掺杂剂可以代替V_2O_5以降低BZN的烧结温度并与银共烧。

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