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首页> 外文期刊>Materials Chemistry and Physics >Dielectric properties of copper oxide doped 0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3 ceramics at microwave frequency
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Dielectric properties of copper oxide doped 0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3 ceramics at microwave frequency

机译:微波频率下掺杂0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3陶瓷的氧化铜介电性能

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摘要

The microwave dielectric properties of conventional solid state route prepared 0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3 ceramics with CuO addition have been investigated. Ordering structure was not observed at sintering temperatures 1280-1430℃. Copper oxide, as a sintering aid, was found to effectively lower the sintering temperature of 0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3 ceramics. The Q x f values of 58 000-93 000 (at 7 GHz) can be obtained when the sintering temperatures are in the range of 1280-1430℃. The permittivity (ε_r) as well as the temperature coefficient of resonant frequency τ_f was strongly correlated to the CuO content but independent of the sintering temperature. The ε_r value of 29.6, Q x f value of 93 000 (at 7 GHz) and τ_f value of 3.1 ppm℃~(-1) were obtained for 0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3 ceramics with 1 wt.% CuO addition sintered at 1430℃ for 4h. For applications of high selective microwave ceramic resonator and filter, 0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3 is proposed as a suitable material candidate.
机译:研究了添加CuO的0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3陶瓷的常规固态路线的微波介电性能。烧结温度在1280-1430℃之间没有观察到有序结构。发现氧化铜作为烧结助剂可有效降低0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3陶瓷的烧结温度。当烧结温度在1280-1430℃范围内时,Q x f值为58 000-93 000(在7 GHz下)。介电常数(ε_r)以及共振频率的温度系数τ_f与CuO含量密切相关,但与烧结温度无关。对于0.95Ba(Zn_(1/3)Ta_(2/3))O_3-,获得ε_r值为29.6,Q xf值为93 000(在7 GHz下)和τ_f值为3.1 ppm℃〜(-1)添加了1 wt。%CuO的0.05BaZrO_3陶瓷在1430℃下烧结4小时。对于高选择性微波陶瓷谐振器和滤波器的应用,提出了0.95Ba(Zn_(1/3)Ta_(2/3))O_3-0.05BaZrO_3作为合适的材料候选。

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