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Preparation of Co-passivated porous silicon by stain etching

机译：污点刻蚀制备共钝化多孔硅

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Co-passivated porous silicon (CPS) was prepared by stain etching. CPS samples prepared at different etching stages have different morphologies. All these morphologies are significantly different from those of conventional porous silicon (PS) etched in none cobalt-etching solution. The experimental results indicate that Co atoms only exist in a very thin layer on CPS surface, where Co atoms are well-distributed and Co atoms have hardly diffused into the substrate. Compared with the formation mechanism of conventional PS, there are two routes to generate holes in the formation of CPS, and there is NO2 gas evolved from etching solution in a certain condition during the etching. (C) 2004 Published by Elsevier B.V.
机译：通过污点蚀刻制备了共钝化多孔硅（CPS）。在不同蚀刻阶段制备的CPS样品具有不同的形态。所有这些形态与在无钴腐蚀液中腐蚀的常规多孔硅（PS）的形态都明显不同。实验结果表明，Co原子仅存在于CPS表面的非常薄的一层中，其中Co原子分布均匀，而Co原子几乎不扩散到基底中。与常规PS的形成机理相比，在CPS的形成中有两种产生空穴的途径，并且在蚀刻过程中在一定条件下会从蚀刻溶液中释放出NO2气体。 （C）2004由Elsevier B.V.发布

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