• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Chemistry and Physics >Characterization of BaPbO_3 and Ba(Pb_(1―x)Bi_x)O_3 thin films
【24h】

Characterization of BaPbO_3 and Ba(Pb_(1―x)Bi_x)O_3 thin films

机译：BaPbO_3和Ba（Pb_（1x）Bi_x）O_3薄膜的表征

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

BaPbO_3 and Ba(Pb_(1―x)Bi_x)O_3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO_2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO_3 phase starts to form above 600 ℃ and the Pb-excess addition would enhance the formation of single perovskite BaPbO_3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ωsq~(-1) (resistivity ≈1.07 x 10~(―4) Ωcm) could be obtained at 750 ℃. However, an annealing temperature over 800 ℃ causes reactions between substrate and BaPbO_3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb_(1-x)Bi_x)O_3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq~(―1) at x = 0.3.
机译：通过金属有机沉积（MOD）方法在Pt / Ti / SiO_2 / Si衬底上制备了由2-乙基己酸钡，2-乙基己酸铅和乙酸铋制成的BaPbO_3和Ba（Pb_（1-x）Bi_x）O_3薄膜。研究了这些薄膜的相变和物理性质。 600℃以上开始形成多晶BaPbO_3相，过量添加Pb会促进钙钛矿BaPbO_3相的形成。随着退火温度的升高，在750℃下可获得最佳的薄膜电阻1.6Ωsq〜（-1）（电阻率≈1.07x 10〜（-4）Ωcm）。然而，超过800℃的退火温度会导致衬底与BaPbO_3相之间发生反应，并导致电阻急剧增加。另一方面，尽管在x = 0.3时，薄层电阻增加了10Ωsq〜（-1），但是Ba（Pb_（1-x）Bi_x）O_3薄膜中的Bi替代了Pb可以稳定钙钛矿相。 。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号