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Influence of the copper content on the electrical conductivity of amorphous semiconductors from the system CuAsSe

机译：铜含量对来自系统CuAsSe的非晶半导体电导率的影响

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The electrical conductivity of three glassy samples from the system CuAsSe and its variation with temperature have been studied. The d.c. conductivity has been obtained from the linear current-voltage measurements, showing an Arrhenius-type dependence on temperature. The pre-exponential factor in this dependence indicates that the electrical conduction takes place by hopping between localized states in the gap. This theoretical model also explains the rise in conductivity when the copper content is increased. The a.c. conductivity of the samples has been measured by means of a complex impedance spectroscopic method, in the range 1-10~5 Hz, under isothermal conditions. From the real part of this parameter, the d.c. conductivity (frequency independent component) is also calculated. The frequency dependent component of a.c. conductivity fits adequately well to the Debye model. This fact implies that ionic conductivity is much lower than electronic conductivity in these materials, and the dielectric relaxation process shown has been explained in terms of the hopping model described for d.c. electrical conduction.
机译：研究了来自CuAsSe系统的三个玻璃态样品的电导率及其随温度的变化。直流电通过线性电流-电压测量获得了电导率，显示出Arrhenius型对温度的依赖性。这种相关性的指数前因数表明，通过在间隙中的局部状态之间跳跃来进行导电。该理论模型还解释了当铜含量增加时电导率的升高。交流样品的电导率已通过复阻抗谱法在等温条件下测量，范围为1-10〜5 Hz。从该参数的实数部分来看，直流电还计算出电导率（与频率无关的分量）。交流电的频率相关分量电导率非常适合Debye模型。这一事实表明，在这些材料中，离子电导率远低于电子电导率，所显示的介电弛豫过程已根据对d.c所述的跳变模型进行了解释。导电。

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