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首页> 外文期刊>Materials Letters >Electrical percolation threshold evaluation of silver thin films for multilayer WO_3/Ag/WO_3 transparent conductive oxide
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Electrical percolation threshold evaluation of silver thin films for multilayer WO_3/Ag/WO_3 transparent conductive oxide

机译：多层WO_3 / Ag / WO_3透明导电氧化物银薄膜的电渗流阈值评估

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摘要

In this work, we developed an algorithm capable of identifying the electrical percolation threshold from AFM images of silver (Ag) thin films with different thickness. The percolation threshold was first determined experimentally using electrical measurements. Subsequently, the AFM images, film thicknesses, and conductivity values were fed to the algorithm to correlate the morphology from the AFM images and determine the existence of electrical conductivity. Then, the algorithm was calibrated using the threshold values found experimentally. Finally, the minimum thickness necessary for electrical percolation of silver thin films was determined to be around 7 nm. This methodology eliminates the urgency to carry out electrical measurements once the morphological ones are available, providing a criterion that allows to decide whether a film is suitable for its use as an intermediate layer in multilayer TCOs. To validate these results, indium free room temperature TCOs multilayer WO3/Ag/WO3 were grown and the Haacke figure of merit (FOM) were calculated. A good quality WO3-based TCO was obtained with a FOM value of 1.11 x 10(-2) Omega(-1) for WO3 (10 nm)/Ag(7 nm)/WO3 (20 nm). (C) 2019 Elsevier B.V. All rights reserved.
机译：在这项工作中，我们开发了一种算法，该算法能够从具有不同厚度的银（Ag）薄膜的AFM图像中识别电渗透阈值。首先使用电学测量通过实验确定渗滤阈值。随后，将AFM图像，膜厚和电导率值馈送到算法中，以从AFM图像中关联形态，并确定电导率的存在。然后，使用实验找到的阈值对算法进行校准。最后，确定银薄膜电渗透所需的最小厚度为约7 nm。这种方法消除了形貌可用后进行电测量的紧迫性，提供了一个标准，可以确定薄膜是否适合用作多层TCO中的中间层。为了验证这些结果，生长了无铟的室温TCO多层WO3 / Ag / WO3，并计算了Haacke品质因数（FOM）。获得了高质量的基于WO3的TCO，对于WO3（10 nm）/ Ag（7 nm）/ WO3（20 nm），FOM值为1.11 x 10（-2）Omega（-1）。 （C）2019 Elsevier B.V.保留所有权利。

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