Synthesis of vertically electric-field-aligned In_2O_3 nanowires

S.Q. Li; Y.X. Liang; T.L. Guo

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Synthesis of vertically electric-field-aligned In_2O_3 nanowires

机译：垂直电场取向的In_2O_3纳米线的合成

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摘要

Electric-field-aligned vertical growth of the In_2O_3 nanowires is realized on InAs substrates at low temperatures in a plasma environment. The experimental results show that the In_2O_3 nanowires are single crystal and have small diameters about 10 nm. It is revealed that the growth follows a catalyst-assisted growth mechanism. The dipoles in the In_2O_3 nanowires, induced by the electric field of plasma sheath, are responsible for the alignment of the In_2O_3 nanowires.

机译：In_2O_3纳米线的电场取向垂直生长是在等离子体环境中的低温下在InAs衬底上实现的。实验结果表明，In_2O_3纳米线为单晶，直径约10 nm。揭示了该生长遵循催化剂辅助的生长机理。 In_2O_3纳米线中的偶极子是由等离子鞘层的电场感应的，它负责In_2O_3纳米线的对齐。

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来源
《Materials Letters》 |2006年第12期|p.1492-1495|共4页
作者
S.Q. Li; Y.X. Liang; T.L. Guo;
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作者单位

Department of Electronics Science and Applied Physics, Fuzhou University, Fujian 350002, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
Electric-field-aligned growth; Low temperatures; In_2O_3 nanowires;

机译：电场取向生长;低温;In_2O_3纳米线;

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1. Electric-field-aligned vertical growth and field emission properties of In_2O_3 nanowires [J] . S. Q. Li, Y. X. Liang, T. H. Wang Applied Physics Letters . 2005,第14期

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2. The synthesis of In, In_2O_3 nanowires and In_2O_3 nanoparticles with shape-controlled [J] . Yingjiu Zhang, Hiroki Ago, Jun Liu, Journal of Crystal Growth . 2004,第1a3期

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3. Vertically well-aligned In_2O_3 cone-like nanowire arrays grown on indium substrates [J] . Yin W., Doty M., Ni C., European journal of inorganic chemistry . 2011,第10期

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4. Large-Scale Synthesis of In_2O_3 Nanowires and Their Characterization [C] . F. Zeng, X. Zhang Pacific Rim International Conference on Advanced Materials and Processing . 2005

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Synthesis of vertically electric-field-aligned In_2O_3 nanowires

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