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首页> 外文期刊>Materials Letters >Fabrication and characterization of tunable dielectric Ba_(0.5)Sr_(0.5)TiO_3 thin films by pulsed laser deposition
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Fabrication and characterization of tunable dielectric Ba_(0.5)Sr_(0.5)TiO_3 thin films by pulsed laser deposition

机译：脉冲激光沉积可调谐介电Ba_（0.5）Sr_（0.5）TiO_3薄膜的制备与表征

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摘要

Highly oriented Ba_(0.5)Sr_(0.5)TiO_3 (BST) perovskite thin films with different thickness ranging from 120 to 600 nm have been fabricated epitaxially on SrRuO_3 (SRO) electrode layer, and (001) LaAlO_3 single crystal as substrates. We observed a strong dependence of dielectric properties on the thickness of the BST films: with the increasing of the thickness, the dielectric loss decreases, the dielectric constant increases, and the dielectric tunability increases as well. For the 600-nm-thick BST thin film, the room-temperature values at the frequency of 1 MHz of the relative dielectric constant, epsilon_r and loss tangent, tan delta, of 1058 and 0.0092 under no bias, and 583 and 0.0068 under 6 V bias, respectively, were achieved. A tunability of 44.8 percent has been achieved with DC bias as low as 6 V. The obtained measurement data renders them very attractive for the tunable microwave device applications.
机译：在SrRuO_3（SRO）电极层上外延制备了具有120至600 nm不同厚度的高取向Ba_（0.5）Sr_（0.5）TiO_3（BST）钙钛矿薄膜，并以（001）LaAlO_3单晶为衬底。我们观察到介电性能对BST膜厚度的强烈依赖性：随着厚度的增加，介电损耗减小，介电常数增加，介电可调性也增加。对于厚度为600 nm的BST薄膜，在无偏置下，相对介电常数epsilon_r和损耗角正切值tan delta在1 MHz的频率下的室温值为1058和0.0092，在6之下为583和0.0068分别实现了Vbias。直流偏置电压低至6 V时，可实现44.8％的可调性。所获得的测量数据使它们对于可调微波设备的应用非常有吸引力。

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