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Potassium niobate thin films prepared through polymeric precursor method

机译:聚合前驱体法制备铌酸钾薄膜

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摘要

Thin films of potassium niobate were deposited on (100) Si substrates by the polymeric precursor method (Pechini method). Annealing in static air was performed at 600 deg C for 20 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy (AFM). Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. At 1 MHz, the dielectric constant was 158 and the dissipation factor was 0.11.
机译:通过聚合前体方法(Pechini方法)将铌酸钾薄膜沉积在(100)Si衬底上。在静态空气中于600摄氏度进行退火20小时。通过X射线衍射和原子力显微镜(AFM)表征获得的膜。薄膜的电学表征通过磁滞回线指示铁电。在10 Hz至10 MHz的频率范围内测量介电常数,耗散因数和电阻。在1 MHz时,介电常数为158,耗散因数为0.11。

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