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首页> 外文期刊>Materials Research Bulletin >Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy
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Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy

机译：准分子激光退火：有效激活等离子辅助分子束外延生长的AlN薄膜中Si掺杂剂的替代途径及其优化

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摘要

Si doped AlN films were grown on GaN/Sapphire templates by plasma assisted molecular beam epitaxy (PAMBE) technique. We show that employing an excimer laser annealing with optimized power and frequency rather than the conventional thermal annealing could be a potential alternative route towards improving the structural and electrical properties of AlN layers. Upon optimized laser annealing of the Si-doped AlN layer, the electron concentration was achieved to be as high as similar to 4.9 x 10(18) cm(-3) which was measured by Raman spectroscopy measurement and was further cross checked by standard Hall measurement which estimated the same as similar to 7.4 x 10(18) cm(-3) with a mobility of 109 cm(2)/V-sec. The improvement of free carrier concentration was leveraged by improvement of structural properties. The r.m.s surface roughness of the Si-doped AlN layers measured by atomic force microscopy was reduced to 0.76 rim and corresponding residual stress estimated by high resolution XRD and Raman measurement was found to be less than half compared to the in-situ Si-doped sample. Thus laser annealing is proposed to be a suitable method to achieve high electron concentration in Si doped AlN films without compromising the structural quality.
机译：通过等离子体辅助分子束外延（PAMBE）技术，在GaN /蓝宝石模板上生长Si掺杂的AlN膜。我们表明，采用具有优化的功率和频率的准分子激光退火而不是传统的热退火可能是改善AlN层的结构和电性能的潜在替代途径。在对掺Si的AlN层进行优化的激光退火后，电子浓度达到了与4.9 x 10（18）cm（-3）相似的高水平，该电子密度通过拉曼光谱法测量并通过标准霍尔进行交叉检查测量结果估计与7.4 x 10（18）cm（-3）相似，迁移率为109 cm（2）/ V-sec。自由载流子浓度的改善通过结构性质的改善而发挥作用。通过原子力显微镜测得的Si掺杂AlN层的均方根表面粗糙度降低到0.76 rim，并且与原位Si掺杂样品相比，通过高分辨率XRD和拉曼测量估计的相应残余应力小于一半。 。因此，提出激光退火是在不损害结构质量的情况下在掺Si的AlN膜中实现高电子浓度的合适方法。

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