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Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method

机译：化学共沉淀法制备GaN和InGaN纳米颗粒的结构和光学性质

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摘要

A facile method for the synthesis of gallium nitride (GaN) and indium gallium nitride (InGaN) nanoparticles (NPs) has been reported by simple chemical co-precipitation method. The average diameters of the GaN and InGaN NPs were 12 nm and 38 nm respectively. GaN NPs show high crystalline quality with hexagonal structure while InGaN NPs exhibits some cubic inclusion by X-ray diffraction. Room-temperature photoluminescence analysis shows the near-band edge emission at 3.43 eV for GaN and a strong blue emission at 3.0 eV for In_(0.4)Ga_(0.6)N NPs. The E_2~H phonon peaks from micro-Raman scattering at 567 cm~(-1) for GaN and 564 cm~(-1) for InGaN confirms the wurtzite nature of both the NPs. In addition, we have also assigned some other phonon modes of GaN associated with zone boundary K point of the Brillouin zone which is not experimentally observed for their bulk counterparts.
机译：通过简单的化学共沉淀法已经报道了一种简便的合成氮化镓（GaN）和氮化铟镓（InGaN）纳米粒子（NPs）的方法。 GaN和InGaN NP的平均直径分别为12 nm和38 nm。 GaN NPs具有六边形结构，显示出高结晶质量，而InGaN NPs通过X射线衍射显示出一些立方夹杂。室温光致发光分析显示，GaN的近带边缘发射为3.43 eV，In_（0.4）Ga_（0.6）N NPs的发射为3.0 eV时有很强的蓝光。 GaN的567 cm〜（-1）和InGaN的564 cm〜（-1）的微喇曼散射产生的E_2〜H声子峰证实了两种NP的纤锌矿性质。此外，我们还指定了其他一些与布里渊区的区域边界K点关联的GaN声子模式，这在实验中并未观察到它们的整体对应物。

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  • 来源
    《Materials Research Bulletin》 |2012年第11期|p.3323-3329|共7页
  • 作者

    M. Gopalakrishnan; V. Purushothaman; P. Sundara Venkatesh; V. Ramakrishnan; K. Jeganathan;

  • 作者单位

    Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu, India;

    Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu, India;

    Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu, India;

    Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai, Tamil Nadu, India;

    Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A. Nitrides; B. Chemical synthesis; C. X-ray diffraction; C. Raman spectroscopy; D. Luminescence;

    机译：A.氮化物;B.化学合成;C. X射线衍射;C.拉曼光谱;D.发光;

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