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首页> 外文期刊>Materials Research Innovations >Etching, dielectric and third order nonlinear optical studies on Czochralski grown Bi_2ZnB_2O_7 single crystal
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Etching, dielectric and third order nonlinear optical studies on Czochralski grown Bi_2ZnB_2O_7 single crystal

机译:Czochralski生长的Bi_2ZnB_2O_7单晶的蚀刻,介电和三阶非线性光学研究

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摘要

Melilite-type crystal Bi_2ZnB_2O_7 was grown by the Czochralski technique from stoichiometric compositionrnof melt. The vibrational frequencies of various functional groups of Bi_2ZnB_2O_7 crystal have been derivedrnfrom Fourier transform infrared and laser Raman analyses. Optical homogeneity and conoscopicrninterferogram of the grown Bi_2ZnB_2O_7 crystal are studied by birefringence interferometric technique.rnChemical etching studies were made on Bi_2ZnB_2O_7 crystal faces in order to understand the growthrnmechanism. Third-order nonlinear optical properties of Bi_2ZnB_2O_7 crystal are studied using Z–scanrntechnique and the obtained results indicate the self-defocusing behaviour of the grown crystal. Further,rnthe dielectric behaviour of Bi_2ZnB_2O_7 crystal is studied.
机译:通过Czochralski技术从化学计量组成的熔体中生长出沸石型晶体Bi_2ZnB_2O_7。通过傅立叶变换红外和激光拉曼分析,得出了Bi_2ZnB_2O_7晶体各官能团的振动频率。采用双折射干涉技术研究了生长的Bi_2ZnB_2O_7晶体的光学均匀性和锥光干涉图。对Bi_2ZnB_2O_7晶体的表面进行了化学刻蚀研究,以了解其生长机理。利用Z扫描技术研究了Bi_2ZnB_2O_7晶体的三阶非线性光学性质,所得结果表明了生长晶体的自散焦行为。进一步研究了Bi_2ZnB_2O_7晶体的介电​​性能。

著录项

  • 来源
    《Materials Research Innovations》 |2017年第2期|79-85|共7页
  • 作者单位

    Crystal Growth and Thin Film Laboratory, Department of Physics,Bharathidasan University, Tiruchirappalli 620 024, India;

    Crystal Growth and Thin Film Laboratory, Department of Physics,Bharathidasan University, Tiruchirappalli 620 024, India;

    Faculty of Engineering and Technology, Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, SRM University,Kattankulathur 603 203, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Optical material; Crystal growth; Dielectric properties; Defects;

    机译:光学材料;晶体生长;介电性能瑕疵;

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