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Formation of a dislocation back stress during creep of copper at low temperatures

机译：低温下铜蠕变过程中位错背应力的形成

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摘要

Copper gives creep strain versus time curves at 75 ℃ that look very similar to those recorded at much higher temperatures. Thus, for example, an extended secondary stage where the strain rate is constant is observed. Considering the high creep exponent that can be up to 75, one would expect a creep curve with rapidly increasing strain rate but that is not found. The difference to creep of pure metals at high temperatures is so large that we can talk about an entirely new material class with respect to creep. To explain the observations a recently developed dislocation model (Sandstrom, 2017) for cell structures is used. A new creep model is presented where a back stress based on the dislocations in the cell walls is introduced. Unbalanced sets of dislocations without matching dislocations of opposite signs are formed in the cell walls. Since the unbalanced content is not exposed to static recovery, it forms a stable back stress. It is shown that the computed back stress can fully explain the observations and reproduce both creep curves and results for slow strain rate tensile tests.
机译：铜在75℃时的蠕变应变与时间的关系曲线看起来与在更高温度下记录的蠕变应变时间曲线非常相似。因此，例如，观察到应变率恒定的扩展的次级阶段。考虑到高达75的高蠕变指数，人们会期望应变率迅速增加的蠕变曲线，但是没有找到。纯金属在高温下的蠕变差异很大，因此我们可以谈论一种全新的蠕变材料。为了解释观察结果，使用了最近开发的用于细胞结构的位错模型（Sandstrom，2017）。提出了一种新的蠕变模型，其中引入了基于单元壁中位错的背应力。在细胞壁中形成了没有平衡的相反符号的错位的不平衡错位集。由于不平衡含量不会受到静态恢复的影响，因此会形成稳定的背应力。结果表明，计算得出的背应力可以充分解释观察结果，并可以再现蠕变曲线和慢应变速率拉伸试验的结果。

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