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Plasticity evolution in nanoscale Cu/Nb single-crystal multilayers as revealed by synchrotron X-ray microdiffraction

机译:同步加速器X射线微衍射揭示的纳米级Cu / Nb单晶多层膜的塑性演化

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摘要

In this study, the evolution of dislocation densities during compressive deformation of nanoscale Cu/Nb single crystal multilayers with individual layer thickness of 20 nm is investigated using Synchrotron X-ray micro-diffraction. The samples were subjected to successive compression straining up to a final cumulative strain of 35% The nanolayer composite exhibited a maximum flow strength of ~1.6 GPa at approximately 24% compressive strain. Synchrotron X-ray micro-diffraction experiments, using a monochromatic beam of 10 keV energy were performed after each compression strain increment We observed a significant increase in X-ray ring width peak broadening in both Cu and Nb layers up to strains of ~3.5% followed by saturation broadening at higher strains. This observation indicates that the interfaces of the Cu/Nb nanolayers are very effective in trapping and annihilating dislocation content during mechanical deformation.
机译:在这项研究中,使用Synchrotron X射线微衍射研究了单层厚度为20 nm的纳米级Cu / Nb单晶多层膜压缩变形过程中位错密度的变化。使样品经受连续的压缩应变,直到最终累积应变为35%。纳米层复合材料在大约24%的压缩应变下显示出约1.6 GPa的最大流动强度。在每次压缩应变增量之后,使用10 keV能量的单色光束进行同步加速器X射线微衍射实验,我们观察到Cu和Nb层中X射线环宽峰展宽的显着增加,直至应变达到〜3.5%然后在较高应变下饱和扩展。该观察结果表明,Cu / Nb纳米层的界面在捕获和消除机械变形过程中的位错含量方面非常有效。

著录项

  • 来源
    《Materials Science and Engineering》 |2015年第21期|6-12|共7页
  • 作者单位

    Singapore University of Technology and Design, Singapore 138682, Singapore,Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory (LANL), Los Alamos, NM 87545, United States;

    Singapore University of Technology and Design, Singapore 138682, Singapore;

    Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory (LANL), Los Alamos, NM 87545, United States;

    MST- 8, Los Alamos National Laboratory (LANL), Los Alamos, NM 87545, United States;

    Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA 94720, United States;

    Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA 94720, United States;

    Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory (LANL), Los Alamos, NM 87545, United States,Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, United States;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Single crystal; Nanolayers; Incoherent interface; Pillar compression; Peak broadening; Dislocation saturation;

    机译:单晶;纳米层;接口不连贯;支柱压缩峰展宽;位错饱和;

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