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首页> 外文期刊>Materials Science and Engineering >Physical interpretation of creep in single crystal Rene N4TM based on a phenomenological model
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Physical interpretation of creep in single crystal Rene N4TM based on a phenomenological model

机译：基于现象学模型的Rene N4TM单晶蠕变的物理解释

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摘要

Creep and rafting in Ni-based single crystal Rene N4 is described using reported phenomenological models after modifying the creep model to represent the rafting induced hardening of the structure against creep and the greater propensity for shearing of_(r') as the structure rafts and dislocation density in the channels and r/r' interface builds up. The proposed model can describe the creep strain evolution at 1144 K over the stress range 241-413 MPa. The rafting model is shown to provide an adequate representation of horizontal and vertical channel width evolution at 1144 K and 1255 K. The variation of the physical parameters in the creep model viz., back stress, dislocation density and shear rate is rationalized scientifically thereby substantiating the physical basis of the model. The development of back stress in the channels is explained mechanistically through the deposition of dislocation segments at rlr' interface by the Orowan loops expanding in the channel and the recovery of the interfacial dislocation networks. The evolution in Orowan stress consequent to rafting and its effect on dislocation activity are elucidated. The evolution of the kinetics for dynamic and static recovery processes which accompany creep strain accumulation has also been explained mechanistically.
机译：在修改蠕变模型后，使用已报道的现象学模型描述了镍基单晶Rene N4的蠕变和筏式流动，以表示筏式诱导结构抵抗蠕变的硬化，以及随着结构筏和位错剪切_（r'）的倾向更大。通道和r / r'接口的密度逐渐增加。所提出的模型可以描述应力范围241-413 MPa下在1144 K下的蠕变应变演化。漂流模型显示了在1144 K和1255 K时水平和垂直通道宽度演变的充分表示。蠕变模型中物理参数的变化，即背应力，位错密度和剪切速率得到了科学合理化，从而证实了这一点。模型的物理基础。通过在通道中扩展的Orowan环和界面错位网络的恢复，通过在rlr'界面处位错节段的沉积来机械解释通道中背应力的发展。漂流导致的Orowan应力的演变及其对位错活动的影响已阐明。还通过机械方法解释了伴随蠕变应变累积的动态和静态恢复过程的动力学演化。

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