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首页> 外文期刊>Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing >Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications
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Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications

机译：粉末冶金制备的散热器用铜基复合材料的界面设计

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摘要

Thermal aspects are becoming increasingly important for the reliability of the electronic components due to the continuous progress of the electronic industries. Therefore, the effective thermal management is a key issue for packaging of high performance semiconductors. The ideal material working as heat sink and heat spreader should have a CTE of (4-8) × 10~(-6) K~(-1) and a high thermal conductivity. Metal matrix composites offer the possibility to tailor the properties of a metal by adding an appropriate reinforcement phase and to meet the demands in thermal management. Copper/SiC and copper/diamond composites have been produced by powder metallurgy. The major challenge in development of Cu/SiC is the control of the interfacial interactions. Silicon carbide is not stable in copper at the temperature needed for the fabrication of Cu/SiC. It is known that the bonding between diamond and copper is very weak in the Cu/diamond composite. Improvements in bonding strength and thermo-physical properties of the composites have been achieved by 1. a vapour deposited molybdenum coating on SiC powders to control interface reactions, 2. using atomized Cu(X) alloys with minor additions of carbide formers, e.g. X = Cr, B, to improve the interfacial bonding in Cu-diamond composites.
机译：由于电子工业的不断发展，热学方面对于电子部件的可靠性变得越来越重要。因此，有效的热管理是高性能半导体封装的关键问题。用作散热器和散热器的理想材料应具有（4-8）×10〜（-6）K〜（-1）的CTE和高导热率。金属基复合材料提供了通过添加适当的增强相来调整金属性能并满足热管理要求的可能性。铜/ SiC和铜/金刚石复合材料已通过粉末冶金生产。开发Cu / SiC的主要挑战是界面相互作用的控制。在制造Cu / SiC所需的温度下，碳化硅在铜中不稳定。已知在铜/金刚石复合物中金刚石和铜之间的结合非常弱。通过1.在SiC粉末上气相沉积钼涂层以控制界面反应，2.使用雾化的Cu（X）合金，并少量添加碳化物形成剂，例如碳纳米管，可以提高复合材料的结合强度和热物理性能。 X = Cr，B，以改善铜-金刚石复合材料中的界面结合。

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