首页> 外文期刊>Materials Science and Engineering. A, Structural Materials >Discrete dislocation simulation of nanoindentation: The effect of statistically distributed dislocations
【24h】

Discrete dislocation simulation of nanoindentation: The effect of statistically distributed dislocations

机译:纳米压痕的离散位错模拟:统计分布的位错的影响

获取原文
获取原文并翻译 | 示例
           

摘要

Nanoindentation is simulated by the motion of statistically distributed discrete dislocations on slip bands parallel to the free surface. We do not allow any dislocation emission from sources in our simulations and show that even under these drastically simplified conditions it is possible to obtain an indentation size effect. The level of decrease of the hardness with increasing indentation depth is shown to be mainly affected by the amount of pre-existing dislocations in the model material and by the lattice friction stress. It is verified that the hardness is much higher than that of a solid, containing dislocation sources.
机译:通过在平行于自由表面的滑带上统计分布的离散位错的运动来模拟纳米压痕。在我们的模拟中,我们不允许源中产生任何位错发射,并且表明即使在这些大大简化的条件下,也可能获得压痕尺寸效应。硬度随着压痕深度的增加而降低的水平主要受模型材料中预先存在的位错的数量和晶格摩擦应力的影响。证实了硬度远高于包含位错源的固体。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号