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首页> 外文期刊>Materials Science and Engineering. A, Structural Materials >Crack tip stress fields revealed by infrared photoelasticity in silicon crystals
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Crack tip stress fields revealed by infrared photoelasticity in silicon crystals

机译：硅晶体中红外光弹性揭示的裂纹尖端应力场

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摘要

Stress fields around a crack tip in silicon crystals have been investigated by using infrared photoelasticity with the aim of clarifying the shielding effect due to crack tip dislocations on the steep increase of fracture toughness in the brittle-to-ductile transition (BDT). First, compact tension tests were carried out at room temperature to make in situ observation of elastic behavior of crack tip stress fields. The photoelastic images observed were in good agreement with those simulated for the usual elastic fields around the tip of a mode I crack. Next, to clarify the stress modification due to crack tip plasticity, three-point bending tests were also made by using notched specimens at high temperatures around 1000 K. After the high temperature test, in spite of the absence of the applied load, residual bright images were observed around the notch. Those images correspond to an internal stress due to dislocations multiplied around the notch, and they have an effect of shielding (accommodating) the stress concentration due to the applied load. The fracture toughness at room temperature was increased by the introduction of the residual stress.
机译：已经通过使用红外光弹性研究了硅晶体中裂纹尖端周围的应力场，目的是弄清裂纹尖端错位对脆性-延性转变（BDT）急剧增加所产生的屏蔽作用。首先，在室温下进行紧凑的拉伸试验，以现场观察裂纹尖端应力场的弹性行为。观察到的光弹性图像与为I型裂纹尖端周围的普通弹性场模拟的图像具有很好的一致性。接下来，为弄清裂纹尖端塑性造成的应力变化，还使用带缺口的试样在1000 K左右的高温下进行了三点弯曲试验。高温试验后，尽管没有施加载荷，但残留光亮在切口周围观察到图像。这些图像对应于由于在缺口处成倍增加的位错而引起的内部应力，并且它们具有屏蔽（容纳）由于施加的载荷而引起的应力集中的作用。引入残余应力可提高室温下的断裂韧性。

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