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首页> 外文期刊>Materials Science and Engineering. A, Structural Materials >Crystallization behavior of the cobalt based metallic glass Co_(65)Si_(15)B_(14)Fe_4Ni_2
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Crystallization behavior of the cobalt based metallic glass Co_(65)Si_(15)B_(14)Fe_4Ni_2

机译：钴基金属玻璃Co_（65）Si_（15）B_（14）Fe_4Ni_2的结晶行为

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摘要

The cobalt based metallic glass Co_(65)Si_(15)B_(14)Fe_4Ni_2 has good soft magnetic properties. Its crystallization behavior has been investigated by electrical resistivity, DSC, XRD and TEM. At elevated temperatures, the resistivity is observed to drop at 540, 630 and 750℃. The first two resistivity drops are consistent with crystallization peaks obtained from DSC experiments. The phases formed are found to be α-Co, ε-Co, Co_2Si, Co_3B_2 in the first crystallization event and Co_2B, Co_4B in the second crystallization event. Supported by the isothermal resistivity results, the crystallization process as observed by TEM is: flower-shaped precipitates forming in the amorphous matrix, sequential nucleation and growth, precipitation inside the grains and at grain boundaries. From electrical resistivity measurement, Curie temperature is found to be 220℃, and the temperature coefficients of resistivity are calculated to be: 1.12 x 10~(-4)K~(-1) in the temperature range 30-220℃ and 0.97 x 10~(-4) K~(-1) in the range 220-500℃ of metallic glass Co_(65)Si_(15)B_(14)Fe_4Ni_2.
机译：钴基金属玻璃Co_（65）Si_（15）B_（14）Fe_4Ni_2具有良好的软磁性能。通过电阻率，DSC，XRD和TEM研究了其结晶行为。在升高的温度下，观察到电阻率在540、630和750℃下降。前两个电阻率下降与从DSC实验获得的结晶峰一致。发现在第一结晶事件中形成的相为α-Co，ε-Co，Co_2Si，Co_3B_2，在第二结晶事件中为Co_2B，Co_4B。通过等温电阻率结果的支持，通过TEM观察到的结晶过程是：在非晶基体中形成花状沉淀物，相继成核和生长，晶粒内部和晶界处的沉淀。通过电阻率测量，发现居里温度为220℃，在30-220℃和0.97 x的温度范围内，电阻率的温度系数计算为：1.12 x 10〜（-4）K〜（-1）金属玻璃Co_（65）Si_（15）B_（14）Fe_4Ni_2在220-500℃范围内的10〜（-4）K〜（-1）。

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