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Effect of the synthesis conditions on the properties of Co embedded porous Si nanostructures

机译：合成条件对Co嵌入多孔Si纳米结构性能的影响

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The electrodeposition of cobalt in the porous silicon (PSi) substrate was investigated in terms of the deposition times and current densities. The PSi/Co samples were characterized by SEM, XRD, Raman, and photoluminescence (PL) spectroscopies. The results indicated that for all current densities, the PL intensities of PSi/Co samples with shorter deposition times (t(s) = 20 min) increased due to spherical Co nanoparticles (NPs) could be created the new recombination centers, compared to that of the undeposited PSi. On the other hand, the PL intensity of PSi/Co samples significantly decreased at longer deposition times (t(1) 20 min) because of larger Co NP cluster promoted the formation of non-radiative centers. The increased PL intensities in samples with t(s) were attributed to both the quantum confinement effect and surface effects. PL analyses also suggested that after exposure to air for 60 days, PL characteristics of PSi/Co were stabilized depending on deposition time and current density.
机译：根据沉积时间和电流密度研究了钴在多孔硅（PSi）基板中的电沉积。通过SEM，XRD，拉曼和光致发光（PL）光谱对PSi / Co样品进行表征。结果表明，与所有电流密度相比，由于球形Co纳米颗粒（NPs）的缘故，与较短的沉积时间（t（s）<= 20分钟）相比，PSi / Co样品的PL强度增加，可以创建新的重组中心，未沉积的PSi。另一方面，PSi / Co样品的PL强度在更长的沉积时间（t（1）> 20分钟）下显着降低，因为较大的Co NP团簇促进了非辐射中心的形成。 t（s）样品中PL强度的增加归因于量子约束效应和表面效应。 PL分析还表明，暴露于空气60天后，PSi / Co的PL特性会根据沉积时间和电流密度而稳定。

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