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Preparation of high purity nano-silicon powders by direct current arc plasma evaporation method

机译：直流电弧等离子体蒸发法制备高纯纳米硅粉

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Direct current arc plasma evaporation method was used in this paper for the industrial preparation of high purity and highly-dispersed nano-silicon powders and the development its high-tech nano products. The influence of cathode current, filling pressure, pressure ratio of Hydrogen to Argon (PH2/PAr) on the particle size and the yield of nano-silicon powders was studied by orthogonal design method in experiment. The evaporation mechanism was also discussed in this paper. The results showed that high purity of 99.93 wt% was achieved with near spherical shape and cubic crystal structure. The average particle size of nano-silicon powders produced in the process in this paper ranged from 35 nm to 63 nm with the yield of 9.2 g h−1–175.2 g h−1. The mechanism of silicon powders evaporation was discussed in the paper, which led to the findings of high yield attributed to the co-existence of molecular evaporation and boiling evaporation coexist.
机译：本文采用直流电弧等离子体蒸发法对高纯度，高分散度的纳米硅粉进行工业制备，并开发其高科技纳米产品。通过正交试验设计研究了阴极电流，填充压力，氢氩压力比（PH2 / PAr）对纳米硅粉粒径和产率的影响。本文还讨论了蒸发机理。结果表明，具有接近球形和立方晶体结构，获得了99.93 wt％的高纯度。该方法生产的纳米硅粉的平均粒径为35 nm至63 nm，产率为9.2 g h-1–175.2 g h-1。讨论了硅粉蒸发的机理，发现了分子蒸发与沸腾蒸发并存的高产率发现。

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