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首页> 外文期刊>Materials Science and Engineering >Proton-irradiation-induced structural and magnetic property changes in Ni-Mn-Ga high-temperature shape memory films
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Proton-irradiation-induced structural and magnetic property changes in Ni-Mn-Ga high-temperature shape memory films

机译：Ni-Mn-Ga高温形状记忆膜中质子辐照引起的结构和磁性变化

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摘要

Ni_(51.90)Mn_(28.86)Ga_(19.24) alloy films were irradiated by 120 keV protons at different fluences to investigate the effect of irradiation on their crystal structure, phase-transition temperature, and magnetic properties. The results show not only that a nanoscale amorphous layer may have been induced on the surface, but also that non-modulated (NM) martensite was produced. Moreover, differential scanning calorimetry peaks of the martensitic and austenitic transition temperatures are shifted to higher temperatures after irradiation; in particular, two endothermic and two exothermic peaks were observed for a proton fluence of 2.0 × 10~(16)/cm~2. Further, the formation of NM martensite could produce an extra shoulder on the M-T curves of the irradiated films. Regarding the magnetic properties, a gradual decrease in the Curie temperature T_C can be caused by irradiation at a higher proton fluence. The changes in the saturation magnetization M_S with the proton fluence seem to be related to the reduction in T_C.
机译：以不同的通量分别以120 keV质子辐照Ni_（51.90）Mn_（28.86）Ga_（19.24）合金膜，以研究辐照对其晶体结构，相变温度和磁性的影响。结果表明，不仅可能在表面上诱导了纳米级非晶层，而且还产生了非调节（NM）马氏体。此外，马氏体和奥氏体转变温度的差示扫描量热峰在辐照后移至更高的温度。特别是，在2.0×10〜（16）/ cm〜2的质子通量下，观察到两个吸热峰和两个放热峰。此外，NM马氏体的形成可以在被辐照膜的M-T曲线上产生额外的肩峰。关于磁性能，居里温度T_C的逐渐降低可能是由于以更高的质子注量辐照引起的。饱和磁化强度M_S随质子注量的变化似乎与T_C的降低有关。

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  • 来源
    《Materials Science and Engineering》 |2017年第9期|76-83|共8页
  • 作者

    Zhai-Ping Yang; Zhi-Yong Gao; Wei Cai;

  • 作者单位

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;

    School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;

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