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Impact of nitrogen plasma passivation on the Al-Ge contact

机译：氮等离子体钝化对Al / n-Ge接触的影响

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摘要

Severe Fermi level pinning at the interface of metal-Ge leads to the formation of a Schottky barrier. Therefore, a high contact resistance is introduced, debasing the performance of Ge devices. In this study, a Ge surface was treated by nitrogen plasma to form an ultra-thin Germanium oxynitride (GeO_xN_y) passivation layer. It was found that the Schottky barrier height (SBH) of metal-Ge contact was strongly modulated by the GeO_xN_y interlayer, indicating alleviation of Fermi-level pinning effect. By adjusting the principal parameters of N_2 plasma treatment and additional post anneal, a Quasi-ohmic Al-Ge contact was achieved. Furthermore, the introduced GeO_xN_y layer gave extremely lower leakage current density of the gate stack for HfO_2/Ge devices. These results demonstrate that GeO_xN_y formed by N_2 plasma would be greatly beneficial to the fabrication of the Ge-based devices.
机译：严重的费米能级钉扎在金属/ n-Ge的界面上会导致形成肖特基势垒。因此，引入了高接触电阻，使Ge器件的性能下降。在这项研究中，通过氮等离子体对Ge表面进行处理，以形成超薄的氮氧化锗（GeO_xN_y）钝化层。发现金属/ n-Ge接触的肖特基势垒高度（SBH）受GeO_xN_y中间层的强烈调节，表明费米能级钉扎效应得到缓解。通过调整N_2等离子体处理和其他后退火的主要参数，实现了准欧姆Al / n-Ge接触。此外，引入的GeO_xN_y层为HfO_2 / Ge器件提供了极低的栅堆叠泄漏电流密度。这些结果表明，由N_2等离子体形成的GeO_xN_y将极大地有利于Ge基器件的制造。

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  • 来源
    《Materials Science and Engineering》 |2016年第9期|178-184|共7页
  • 作者

    Shumei Lai; Danfeng Mao; Yujiao Ruan; Yihong Xu; Zhiwei Huang; Wei Huang; Songyan Chen; Cheng Li; Jianyuan Wang; Dingliang Tang;

  • 作者单位

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    Xiamen Institute of Measurement and Testing, Xiamen, Fujian 361004, China;

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    Department of Physics, Xiamen University, Xiamen, Fujian 361005, China;

    College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian 361005, China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Al-Ge contact; Germanium oxynitride; Schottky barrier height;

    机译：Al / n-Ge接触;氮氧化锗;肖特基势垒高度;

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