...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering >Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods
【24h】

Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

机译：ZnO纳米线阵列直接通过湿法化学和干法蚀刻方法通过衬底形貌调整在Si上生长

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.
机译：在不使用种子层的情况下，已经成功地生长了无CVD催化剂的ZnO纳米线阵列，使用湿法化学和干法等离子体刻蚀方法来改变表面形貌。 XPS分析表明，NW的增长不能归因于基底表面的化学性质，因此与基底的形貌直接相关。这些纳米线证明了CVD ZnO纳米线的典型结构和光学特性。此外，NW阵列与基板法线的垂直对齐程度小于20°。电学测量表明在种子层生长的纳米线上通过衬底的导电路径得到了改善。此外，蚀刻技术与电子束光刻技术相结合以产生高分辨率的选择性区域纳米线生长。使用成熟的干法蚀刻技术对均匀的纳米线进行图案化的能力，以及通过衬底的增加的电荷传输，证明了该技术在纳米线阵列的垂直集成中的潜力。

著录项

  • 来源
    《Materials Science and Engineering》 |2015年第3期|41-48|共8页
  • 作者

    Nathan A. Smith; Jon E. Evans; Daniel R. Jones; Alex M. Lord; S.P. Wilks;

  • 作者单位

    Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom;

    Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom;

    Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom;

    Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom;

    Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zinc oxide; Nanowire; Vertical; Device; Array; Catalyst free;

    机译：氧化锌纳米线;垂直;设备;数组;无催化剂;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号