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首页> 外文期刊>Materials Science and Engineering >Bipolar resistive switching and charge transport in silicon oxide memristor
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Bipolar resistive switching and charge transport in silicon oxide memristor

机译：氧化硅忆阻器中的双极电阻切换和电荷传输

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摘要

Reproducible bipolar resistive switching has been studied in SiO_x-based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO_2/Si substrates. It is established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resistance state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide. The switching parameters are determined by a balance between the reduction and oxidation processes that, in turn, are driven by the value and polarity of voltage bias, current, temperature and device environment. The results can be used for the development of silicon-based nonvolatile memory and memristive systems as a key component of future electronics.
机译：在磁控溅射技术沉积在TiN / Ti金属化SiO_2 / Si衬底上的SiO_x基薄膜忆阻器结构中，研究了可再现的双极电阻开关。可以确定的是，在电铸之后，可以通过与硅类似的电荷迁移机制，通过硅的缺陷，在与硅链（导电细丝）有关的准欧姆低电阻状态和高电阻状态之间切换结构。氧化物。开关参数取决于还原和氧化过程之间的平衡，而平衡又取决于电压偏置，电流，温度和器件环境的值和极性。该结果可用于开发基于硅的非易失性存储器和忆阻系统，作为未来电子产品的关键组件。

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  • 来源
    《Materials Science and Engineering》 |2015年第4期|48-54|共7页
  • 作者

    Alexey N. Mikhaylov; Alexey I. Belov; Davud V. Guseinov; Dmitry S. Korolev; Ivan N. Antonov; Denis V. Efimovykh; Stanislav V. Tikhov; Alexander P. Kasatkin; Oleg N. Gorshkov; David I. Tetelbaum; Alexander I. Bobrov; Natalia V. Malekhonova; Dmitry A. Pavlov; Evgeny G. Gryaznov; Alexander P. Yatmanov;

  • 作者单位

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia;

    Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950, Russia,Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950, Russia;

    Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950, Russia;

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  • 正文语种 eng
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  • 关键词

    Memristor; Silicon oxide; Magnetron sputtering; Resistive switching; Charge transport; Admittance spectroscopy;

    机译：忆阻器氧化硅磁控溅射;电阻开关;电荷运输;导纳光谱;

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