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Band gap engineering of indium zinc oxide by nitrogen incorporation

机译：氮掺入氧化铟锌的带隙工程

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摘要

The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N_2/Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N_2/Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10~(-4) Ω cm with a carrier concentration of 5.1 × 10~(20) cm~(-3).
机译：研究了射频反应磁控溅射法在铟锌氧化物薄膜中掺入氮对结构，电学和光学性质的影响。已确定，反应气体通量中N_2 / Ar比的变化与样品中测得的氮百分比成正比，并且掺入的氮取代了薄膜中的氧，导致氮的带隙发生变化。电影。通过结合光谱椭圆光度法测量吸收光谱和透射光谱观察到了这种现象。为了拟合椭偏光谱，使用了经典色散模型和足立色散模型。所获得的光学参数呈现出与膜中氮的增加有关的显着变化。随着N_2 / Ar比的增加，带隙从3.5 eV缩小到2.5 eV。这些薄膜的最低电阻率是3.8×10〜（-4）Ωcm，载流子浓度为5.1×10〜（20）cm〜（-3）。

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  • 来源
    《Materials Science and Engineering》 |2014年第9期|83-88|共6页
  • 作者

    J.J. Ortega; M.A. Aguilar-Frutis; G. Alarcon; C. Falcony; V.H. Mendez-Garcia; J.J. Araiza;

  • 作者单位

    Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esq. Paseo la Bufa, Fracc. Progreso, C.P. 98060 Zacatecas, Mexico,Doctorado Institucional de Ingenieria y Ciencia de Materiales, Universidad Autonoma de San Luis Potosi, Av. Salvador Nava, Zona Universitaria, C.P. 78270 San Luis Potosi, Mexico;

    Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada del Instituto Politecnico Nacional, Unidad Legaria, Calz. Legaria No. 694, Col. Irrigacion, C.P. 11500 Mexico D.F., Mexico;

    Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada del Instituto Politecnico Nacional, Unidad Legaria, Calz. Legaria No. 694, Col. Irrigacion, C.P. 11500 Mexico D.F., Mexico;

    Departamento de Fisica, Centro de Investigacion y Estudios Avanzados del Instituto Politecnico Nacional campus Zacatenco, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, C.P. 07360 Mexico D.F., Mexico;

    Doctorado Institucional de Ingenieria y Ciencia de Materiales, Universidad Autonoma de San Luis Potosi, Av. Salvador Nava, Zona Universitaria, C.P. 78270 San Luis Potosi, Mexico,Laboratorio Nacional-CIACyT, Universidad Autonoma de San Luis Potosi, Sierra Leona 550, Lomas 2~a - Secc, C.P. 78210 San Luis Potosi, Mexico;

    Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esq. Paseo la Bufa, Fracc. Progreso, C.P. 98060 Zacatecas, Mexico;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Indium zinc oxynitride; Nitrogen incorporation; Band gap engineering; Band gap narrowing;

    机译：氧氮化铟锌;氮掺入;带隙工程;带隙变窄;

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