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首页> 外文期刊>Materials Science and Engineering >Resistive switching in epitaxial BaTiO_3 films grown on Nb-doped SrTiO_3 by PLD
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Resistive switching in epitaxial BaTiO_3 films grown on Nb-doped SrTiO_3 by PLD

机译：PLD在掺Nb的SrTiO_3上生长的外延BaTiO_3薄膜的电阻转换

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摘要

100-nm-thick epitaxial BaTiO_3 (BTO) films were prepared on the Nb-doped SrTiO_3 (NSTO) single-crystal substrates by pulsed laser deposition. Bipolar resistive switching (RS) behavior was observed in the as-prepared BTO/NSTO samples, which was attributed to the formation and rupture of conductive filaments in the BTO films. The RS effect was suppressed after the samples were annealed in air due to the decrease in oxygen vacancies during annealing, which was confirmed by X-ray photoelectron spectroscopy (XPS) measurements. The current-voltage curves of the as-prepared samples show linear ohmic conduction at the low resistive state and space-charge-limited conduction (SCLC) at the high resistive state, respectively. SCLC dominated in the annealed samples.
机译：在Nb掺杂SrTiO_3（NSTO）单晶衬底上通过脉冲激光沉积制备了100 nm厚的外延BaTiO_3（BTO）膜。在制备的BTO / NSTO样品中观察到双极电阻切换（RS）行为，这归因于BTO薄膜中导电细丝的形成和破裂。 X射线光电子能谱（XPS）测量证实，由于退火过程中氧空位的减少，使样品在空气中退火后，RS效应受到抑制。所制备样品的电流-电压曲线分别在低电阻状态下显示线性欧姆导电，在高电阻状态下显示空间电荷限制导电（SCLC）。 SCLC在退火样品中占主导地位。

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  • 来源
    《Materials Science and Engineering》 |2014年第10期|84-88|共5页
  • 作者

    Ruikun Pan; Yunbin He; Mingkai Li; Pai Li; Panke Liu; Zhengcai Xia;

  • 作者单位

    School of Materials Science & Engineering, Hubei University, Wuhan 430062, PR China, Wuhan National High Magnetic Field Center, Huazhong University of Science & Technology, Wuhan 430074, PR China;

    School of Materials Science & Engineering, Hubei University, Wuhan 430062, PR China;

    School of Materials Science & Engineering, Hubei University, Wuhan 430062, PR China;

    School of Materials Science & Engineering, Hubei University, Wuhan 430062, PR China;

    School of Materials Science & Engineering, Hubei University, Wuhan 430062, PR China;

    Wuhan National High Magnetic Field Center, Huazhong University of Science & Technology, Wuhan 430074, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Resistive switching; BaTiO_3 film; Conduction mechanism;

    机译：电阻开关;BaTiO_3膜;传导机制;

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