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首页> 外文期刊>Materials Science and Engineering >Structural, optical and electrical properties of silicon nanocrystals embedded in Si_xC_(1-x)/SiC multilayer systems for photovoltaic applications
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Structural, optical and electrical properties of silicon nanocrystals embedded in Si_xC_(1-x)/SiC multilayer systems for photovoltaic applications

机译：嵌入光伏应用的Si_xC_（1-x）/ SiC多层系统中的硅纳米晶体的结构，光学和电学性质

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摘要

In this work we present a structural, optical and electrical characterization of Si_xC_(1-x)/SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R&T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R&T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC_Yo_z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers.
机译：在这项工作中，我们介绍了具有不同硅含量的Si_xC_（1-x）/ SiC多层系统的结构，光学和电气特性。在沉积过程之后，进行退火处理以诱导硅纳米晶体的形成。通过能量过滤透射电子显微镜（EFTEM），我们观察到了多层的结构形态以及退火至1100 C的样品中结晶的硅纳米沉淀的存在。我们讨论了光学技术的适用性，例如拉曼散射，反射率和透射率（R＆T）用于评估我们在不同硅过量范围内样品的结晶分数。此外，R＆T测量与模拟相结合已被证明是确认EFTEM观察到的结构特性的有用工具。最后，我们探索了通过电学测量揭示的极高电流密度的起源，这可能是由于存在不希望有缺陷的SiC_Yo_z三元化合物层而已，这已经得到结构和光学结果的支持。然而，电学测量值随硅含量的变化表明多层结构的贡献很小但很明显。

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  • 来源
    《Materials Science and Engineering》 |2013年第9期|639-644|共6页
  • 作者

    J. Lopez-Vidrier; S. Hernandez; J. Sama; M. Canino; M. Allegrezza; M. Bellettato; R.Shukla; M.Schnabel; P.Loeper; L.Lopez-Conesa; S.Estrade; F.Peiro; S.Janz; B.Garrido;

  • 作者单位

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti i Franques 1, E-08028 Barcelona, Spain;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti I Franques 1, E-08028 Barcelona, Spain;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti I Franques 1, E-08028 Barcelona, Spain;

    CNR-IMM, Consiglio Nazionale delle Richerche - Istituto per la Microelettronica e Microsistemi, Via Gobetti 101, 1-40129 Bologna, Italy;

    CNR-IMM, Consiglio Nazionale delle Richerche - Istituto per la Microelettronica e Microsistemi, Via Gobetti 101, 1-40129 Bologna, Italy;

    CNR-IMM, Consiglio Nazionale delle Richerche - Istituto per la Microelettronica e Microsistemi, Via Gobetti 101, 1-40129 Bologna, Italy;

    CNR-IMM, Consiglio Nazionale delle Richerche - Istituto per la Microelettronica e Microsistemi, Via Gobetti 101, 1-40129 Bologna, Italy;

    Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr, 2, D-79110 Freiburg, Germany;

    Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr, 2, D-79110 Freiburg, Germany;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti I Franques 1, E-08028 Barcelona, Spain;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti I Franques 1, E-08028 Barcelona, Spain ,TEM-MAT. CCiT-UB. Scientific and Technological Center - University of Barcelona. Sole i Sabaris 1, E-08028 Barcelona, Spain;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti I Franques 1, E-08028 Barcelona, Spain;

    Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr, 2, D-79110 Freiburg, Germany;

    MIND-IN~2 UB, Electronics Department, University of Barcelona, Marti I Franques 1, E-08028 Barcelona, Spain;

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  • 正文语种 eng
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  • 关键词

    Silicon-rich silicon carbide; Silicon nanocrystals; Structure shrinkage; Oxycarbide; Crystalline fraction; Electrical measurements;

    机译：富硅碳化硅;硅纳米晶体;结构收缩;碳氧化物结晶分数;电气测量;

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