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首页> 外文期刊>Materials Science and Engineering >Characterization of laser-induced damage in silicon solar cells during selective ablation processes
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Characterization of laser-induced damage in silicon solar cells during selective ablation processes

机译：选择性烧蚀过程中硅太阳能电池中激光诱导的损伤的表征

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摘要

Selective laser ablation of silicon nitride layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed with a nanosecond UV laser at various energy densities ranging from 0.2 to 1.5Jcm~(-2). Optical microscopy was used as a simple mean to assess the ablation threshold that was correlated to the temperature at the interface between the silicon nitride coating and the silicon substrate. Minority carrier lifetime measurements were performed using a microwave photo-conductance decay technique. Band to band photoluminescence spectroscopy proved to be a sensitive technique to qualify the laser-induced damage to the silicon substrate. The crystalline structure of silicon seemed to be maintained after silicon nitride ablation as shown by UV reflectivity measurements. Laser parameters corresponding to fluences of around 0.4Jcm~(-2) were found to achieve selective ablation of SiN_x without causing detrimental damage to the surrounding material.
机译：研究了晶体硅晶片上氮化硅层的选择性激光烧蚀，以用于太阳能电池的制造。用纳秒级紫外线激光器以0.2至1.5Jcm〜（-2）的各种能量密度进行激光加工。光学显微镜被用作评估与氮化硅涂层和硅衬底之间的界面温度相关的烧蚀阈值的简单手段。使用微波光电导衰减技术进行少数载流子寿命测量。带间光致发光光谱被证明是鉴定激光诱导的对硅衬底的损伤的灵敏技术。如紫外线反射率测量所示，氮化硅烧蚀后，似乎保持了硅的晶体结构。发现对应于约0.4Jcm〜（-2）的注量的激光参数实现了SiN_x的选择性烧蚀，而不会对周围的材料造成有害的损害。

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  • 来源
    《Materials Science and Engineering》 |2013年第9期|682-685|共4页
  • 作者

    G.Poulain; D.Blanc; A. Focsa; M. De Vita; K. Fraser; Y.Sayad; M.Lemiti;

  • 作者单位

    Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270. CNRS, INSA de Lyon, Batiment Blaise pascal, Villeurbanne, F-69621, France ,Agence de l'environnement et de la Maitrise de l'Energie, 20, avenue du Cresille, BP 90406 49004 Angers Cedex 01, France;

    Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Batiment Blaise pascal, Villeurbanne, F-69621, France;

    Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Batiment Blaise pascal, Villeurbanne, F-69621, France;

    Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Batiment Blaise pascal, Villeurbanne, F-69621, France;

    Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Batiment Blaise pascal, Villeurbanne, F-69621, France;

    Institut de Sciences et Technologies, Centre Universitaire de Souk Ahras, Route de Annaba, Souk Ahras, Algeria;

    Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Batiment Blaise pascal, Villeurbanne, F-69621, France;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Laser processing; Dielectric ablation; Minority carrier lifetime; Photoluminescence; Silicon solar cells;

    机译：激光加工;介电烧蚀;少数族裔的寿命;光致发光;硅太阳能电池;

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