Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution

C.David; F. Paumier; B.P.Tinkham; D. Eyidi; M.Marteau; P.Guerin; T.Girardeau

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Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution

机译：通过化学气相沉积沉积的ZnO：B薄膜退火引起的电性能的改变：演化动力学研究

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In this study temperature dependent Hall effect measurements combined with Fourier Transformed Infra-Red (FTIR) spectroscopy measurements is used to determine the evolution of the scattering mechanisms ascribable to in-grain and grain boundaries on Boron doped ZnO thin films deposited by Low Pressure Chemical Vapour Deposition (LPCVD). Through Hall effect measurements during in situ isothermal annealing, changes in electrical characteristics of zinc oxide could be followed in real time. Whereas only degradation is observed in air, an improvement of layer conductivity could be achieved at low temperatures by annealing under argon atmosphere. A study of the conductivity during isothermal annealing offers the possibility to extract activation energies, which have been compared to migration energies of the different intrinsic defects in ZnO.

机译：在这项研究中，与温度相关的霍尔效应测量与傅立叶变换红外（FTIR）光谱测量相结合，用于确定归因于低压化学气相沉积的硼掺杂ZnO薄膜上的晶界和晶界的散射机理的演变。沉积（LPCVD）。通过在原位等温退火过程中进行霍尔效应测量，可以实时跟踪氧化锌的电特性变化。尽管在空气中仅观察到降解，但是在低温下通过在氩气氛下退火可以实现层电导率的改善。对等温退火过程中电导率的研究提供了提取活化能的可能性，该活化能已与ZnO中各种固有缺陷的迁移能进行了比较。

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来源
《Materials Science and Engineering》 |2013年第9期|698-702|共5页
作者
C.David; F. Paumier; B.P.Tinkham; D. Eyidi; M.Marteau; P.Guerin; T.Girardeau;
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作者单位

Inventux Technologies AG, Wolfener Strasse 23, 12681 Berlin, Germany ,Institut Pprime, Departement de Physique et Mecanique des Materiaux, CNRS - Universite de Poitiers, F-86962 Futuroscope Chasseneuil Cedex, France;

Institut Pprime, Departement de Physique et Mecanique des Materiaux, CNRS - Universite de Poitiers, F-86962 Futuroscope Chasseneuil Cedex, France;

Inventux Technologies AG, Wolfener Strasse 23, 12681 Berlin, Germany;

Institut Pprime, Departement de Physique et Mecanique des Materiaux, CNRS - Universite de Poitiers, F-86962 Futuroscope Chasseneuil Cedex, France;

Institut Pprime, Departement de Physique et Mecanique des Materiaux, CNRS - Universite de Poitiers, F-86962 Futuroscope Chasseneuil Cedex, France;

Institut Pprime, Departement de Physique et Mecanique des Materiaux, CNRS - Universite de Poitiers, F-86962 Futuroscope Chasseneuil Cedex, France;

Institut Pprime, Departement de Physique et Mecanique des Materiaux, CNRS - Universite de Poitiers, F-86962 Futuroscope Chasseneuil Cedex, France;

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正文语种 eng
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关键词
Electrical properties; Isothermal annealing; Kinetic studies; Thermal treatment; Scattering mechanisms; ZnO;

机译：电气性能;等温退火;动力学研究;热处理;散射机制;氧化锌;

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Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution

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